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High Current Gain NPN Darlington Transistor Slkor BCV47 Ideal for Amplification and Electronic Circuits
High Current Gain NPN Darlington Transistor Slkor BCV47 Ideal for Amplification and Electronic Circuits
Specifications
Current - Collector Cutoff :
100nA
Vce Saturation(VCE(sat)) :
1V@100mA,0.1mA
type :
NPN
Pd - Power Dissipation :
200mW
Current - Collector(Ic) :
500mA
Description :
NPN 200mW 500mA SOT-23 Single Bipolar Transistors RoHS
Mfr. Part # :
BCV47
Model Number :
BCV47
Package :
SOT-23
Description

Product Overview

The BCV27 and BCV47 are NPN Darlington transistors designed for applications requiring high collector current and high current gain. These transistors are suitable for various electronic circuits where amplification and switching capabilities are needed.

Product Attributes

  • Brand: slkormicro (implied from website URL)
  • Type: NPN Darlington Transistor
  • Package: SOT-23

Technical Specifications

Parameter Symbol BCV27 BCV47 Unit
Absolute Maximum Ratings
Collector Base Voltage VCBO 40 80 V
Collector Emitter Voltage VCEO 30 60 V
Emitter Base Voltage VEBO 10 V
Collector Current IC 500 mA
Peak Collector Current ICM 800 mA
Base Current IB 100 mA
Maximum Power Dissipation PD 200 mW
Junction Temperature TJ 150
Storage Temperature Range TSTG -65 to +150
Electrical Characteristics
DC Current Gain (VCE=5V, IC=1mA) HFE 4000 2000 --
DC Current Gain (VCE=5V, IC=10mA) HFE 10000 4000 --
DC Current Gain (VCE=5V, IC=100mA) HFE 20000 10000 --
Collector Base Cutoff Current (VCB=30V) ICBO 100 -- nA
Collector Base Cutoff Current (VCB=60V) ICBO -- 100 nA
Emitter Base Cutoff Current (VEB=10V) IEBO 100 nA
Collector Base Breakdown Voltage (IC=100A) V(BR)CBO 40 80 V
Collector Emitter Breakdown Voltage (IC=10mA) V(BR)CEO 30 60 V
Emitter Base Breakdown Voltage (IE=10A) V(BR)EBO 10 V
Collector Emitter Saturation Voltage (IC=100mA, IB=0.1mA) VCE(sat) 1 V
Base Emitter Saturation Voltage (IC=100mA, IB=0.1mA) VBE(sat) 1.5 V
Base Emitter On Voltage (VCE=5V, IC=10mA) VBE(on) 1.4 V
Transition Frequency (VCE=5V, IC=30mA, f=100MHz) FT -- 220 MHz
Device Package Shipping
BCV27, BCV47 SOT-23 3,000PCS/Reel&7inches

Soldering and Storage Conditions

  • Reflow Soldering: Recommended peak temperature over 245 C. Adjust parameters (time length, solder paste thickness) if below 245 C.
  • Hand Soldering: Temperature: 370 C, Time: 3s max., Times: one time.
  • Storage Conditions: Temperature 5 to 40 C, Humidity 30 to 80% RH. Recommended period: One year after manufacturing.

2412061751_Slkor-BCV47_C41369493.pdf

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High Current Gain NPN Darlington Transistor Slkor BCV47 Ideal for Amplification and Electronic Circuits

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Product Detail
Current - Collector Cutoff :
100nA
Vce Saturation(VCE(sat)) :
1V@100mA,0.1mA
type :
NPN
Pd - Power Dissipation :
200mW
Current - Collector(Ic) :
500mA
Description :
NPN 200mW 500mA SOT-23 Single Bipolar Transistors RoHS
Contact Supplier
High Current Gain NPN Darlington Transistor Slkor BCV47 Ideal for Amplification and Electronic Circuits

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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