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General purpose NPN transistor Slkor BC817-25W with high collector current and low saturation voltage
General purpose NPN transistor Slkor BC817-25W with high collector current and low saturation voltage
Specifications
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
100nA
DC Current Gain :
160@100mA,1V
Transition frequency(fT) :
100MHz
Number :
1 NPN
type :
NPN
Vce Saturation(VCE(sat)) :
700mV@500mA,50mA
Pd - Power Dissipation :
200mW
Current - Collector(Ic) :
500mA
Collector - Emitter Voltage VCEO :
45V
Operating Temperature :
-
Description :
Bipolar (BJT) Transistor NPN 45V 0.5A 100MHz 0.2W Surface Mount SOT-323
Mfr. Part # :
BC817-25W
Model Number :
BC817-25W
Package :
SOT-323
Description

Product Overview

The BC817 is a general-purpose NPN transistor designed for AF applications, offering high collector current and high current gain. It features a low collector-emitter saturation voltage, making it suitable for various electronic circuits. This transistor is available in different ranks, each with a specific DC current gain range, and is supplied in an SOT-323 package.

Product Attributes

  • Brand: SLKORMICRO (implied by website URL)
  • Product Name: BC817
  • Transistor Type: NPN
  • Package Type: SOT-323

Technical Specifications

Parameter Symbol Value Unit Test Conditions
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5 V
Collector Current - Continuous IC 0.5 A
Collector Dissipation PC 0.2 W
Thermal Resistance from Junction to Ambient RJA 625 /W
Junction Temperature Tj 150
Storage Temperature Tstg -55~+150
Collector-base breakdown voltage V(BR)CBO 50 V IC=10A,IE=0
Collector-emitter breakdown voltage V(BR)CEO 45 V IC=10mA,IB=0
Emitter-base breakdown voltage V(BR)EBO 5 V IE=1A,IC=0
Collector cut-off current ICBO 0.1 A VCB=20V,IE=0
Emitter cut-off current IEBO 0.1 A VEB=5V,IC=0
DC current gain (hFE(1)) hFE(1) 100 - 600 VCE=1V,IC=100mA
DC current gain (hFE(2)) hFE(2) 40 VCE=1V,IC=500mA
Collector-emitter saturation voltage VCE(sat) 0.7 V IC=500mA,IB=50mA
Base-emitter saturation voltage VBE(sat) 1.2 V IC=500mA,IB=50mA
Base-emitter voltage VBE(ON) 1.2 V VCE=1V,IC=500mA
Transition frequency fT 100 MHz VCE=5V,IC=10mA,f=100MHz
Collector output capacitance Cob 5 pF VCB=10V,f=1MHz
Rank Range Marking
BC817-16W 100-250 6A
BC817-25W 160-400 6B
BC817-40W 250-600 6C

Dimensions (SOT-323)

Symbol Value (mm)
A 2.2
B 1.8
c 0.23
D 1.1
E 1.35
e 2.2
e1 0.4
HE 1.15
Lp 0.65
Q 0.25
v 0.13
w 0.10
bp 0.8

2201121730_Slkor-BC817-25W_C2936045.pdf

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General purpose NPN transistor Slkor BC817-25W with high collector current and low saturation voltage

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Product Detail
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
100nA
DC Current Gain :
160@100mA,1V
Transition frequency(fT) :
100MHz
Number :
1 NPN
type :
NPN
Contact Supplier
General purpose NPN transistor Slkor BC817-25W with high collector current and low saturation voltage

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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