The FMMT458 is a high voltage SMD type transistor designed for applications requiring up to 400 Volt VCEO. It offers robust performance with specific electrical characteristics and absolute maximum ratings suitable for demanding electronic circuits. This transistor is packaged in the SOT-23 format, making it ideal for surface mount technology integration.
| Parameter | Symbol | Rating/Test Conditions | Unit |
|---|---|---|---|
| Dimensions (Unit: mm) | |||
| Dimension 1 | 0.4 + 0.1 - 0.1 | mm | |
| Dimension 2 | 2.9 + 0.1 - 0.1 | mm | |
| Dimension 3 | 0.95 + 0.1 - 0.1 | mm | |
| Dimension 4 | 1.9 + 0.1 - 0.1 | mm | |
| Dimension 5 | 2.4 + 0.1 - 0.1 | mm | |
| Dimension 6 | 1.3 + 0.1 - 0.1 | mm | |
| Dimension 7 | 0 - 0.1 | mm | |
| Dimension 8 | 0.38 + 0.1 - 0.1 | mm | |
| Dimension 9 | 0.97 + 0.1 - 0.1 | mm | |
| Dimension 10 | 0.55 | ||
| Dimension 11 | 0.4 | ||
| Pin 1 | Base | ||
| Pin 2 | Emitter | ||
| Pin 3 | Collector | ||
| Absolute Maximum Ratings (Ta = 25C) | |||
| Collector-base voltage | VCBO | 400 | V |
| Collector-emitter voltage | VCEO | 400 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Peak collector current | ICM | 1 | A |
| Collector current | IC | 225 | mA |
| Base current | IB | 200 | mA |
| Power dissipation | Ptot | 500 | mW |
| Operating and storage temperature range | Tj, Tstg | -55 to +150 | C |
| Electrical Characteristics (Ta = 25C) | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A | 400 V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=10mA | 400 V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A | 5 V |
| Collector cutoff current | ICBO | VCB=320V | 100 nA |
| Collector Cut-Off Current | ICES | VCE=320V | 100 nA |
| Emitter cut-off current | IEBO | VEB=4V | 100 nA |
| Collector-emitter saturation voltage | VCE(sat) | IC=20mA, IB=2mA | 0.2 V |
| IC=50mA, IB=6mA | 0.5 V | ||
| IC=50mA, IB=5mA | 0.9 V | ||
| Base-emitter saturation voltage | VBE(sat) | ||
| Base-emitter turn on voltage | VBE(on) | IC=50mA, VCE=10V | 0.9 V |
| Static Forward Current Transfer Ratio | hFE | IC=1mA, VCE=10V | 100 |
| IC=50mA, VCE=10V* | 100 - 300 | ||
| IC=100mA, VCE=10V* | |||
| Transition frequency | fT | IC=10mA, VCE=20V, f=20MHz | 50 MHz |
| Output capacitance | Cobo | VCB=20V, f=1MHz | 5 pF |
| Switching times: turn on time | ton | IC=50mA, VCC=100V | 135 ns |
| Switching times: turn off time | toff | IB1=5mA, IB2=-10mA | 2260 ns |