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NPN Silicon Epitaxial Transistor Slkor BFU590Q for Microwave Low Noise Amplifier Applications
NPN Silicon Epitaxial Transistor Slkor BFU590Q for Microwave Low Noise Amplifier Applications
Specifications
Emitter-Base Voltage(Vebo) :
2.5V
Current - Collector Cutoff :
50nA
DC Current Gain :
300@80mA,8V
Transition frequency(fT) :
8.5GHz
Number :
1 NPN
type :
NPN
Pd - Power Dissipation :
2W
Current - Collector(Ic) :
200mA
Collector - Emitter Voltage VCEO :
15V
Operating Temperature :
-40℃~+150℃@(Tj)
Description :
Bipolar (BJT) Transistor NPN 15V 200mA 8.5GHz 2W Surface Mount SOT-89
Mfr. Part # :
BFU590Q
Model Number :
BFU590Q
Package :
SOT-89
Description

Product Overview

The BFU590Q is an NPN silicon epitaxial transistor designed for microwave low-noise amplifier applications. Manufactured using silicon epitaxial process technology, it offers high power gain, wide bandwidth, low noise, low leakage current, and small junction capacitance. Its large dynamic range and excellent current linearity make it ideal for UHF microwave and high-frequency broadband low-noise amplifiers. Typical applications include CATV video amplifiers, wireless transceiver modules, remote control systems, security alarms, and analog/digital cordless phones, suitable for medium-power high-frequency signal amplification.

Product Attributes

  • Brand: SLKOR
  • Model: BFU590Q
  • Type: NPN Silicon Epitaxial Transistor
  • Marking: S59
  • Package: SOT89

Technical Specifications

General Characteristics:

Parameter Symbol Test Condition Min Typical Max Unit
Collector-Base Breakdown Voltage BVCBO open emitter 25 35 V
Collector-Emitter Breakdown Voltage BVCEO open base 15 19 V
Emitter-Base Breakdown Voltage BVEBO open collector 2.5 3.5 V
Collector Current IC 200 mA
Collector Cutoff Current ICBO VCB=6V, IE=0 0.05 A
DC Current Gain hFE VCE=8V, IC=80mA 60 130 300
Characteristic Frequency fT VCE=8V, IC=80mA, f=900MHz 8.0 8.5 GHz
Feedback Capacitance Cre IC=iC=0, VCB=8V, f=1MHz 1.2 pF
Collector Capacitance CC IE=ie=0, VCB=8V, f=1MHz 1.8 pF
Emitter Capacitance Ce IC=iC=0, VEB=0.5V, f=1MHz 3.0 pF
Insertion Power Gain |S21| IC=80mA, VCE=8V, f=433MHz 17.0 18.0 dB
Insertion Power Gain |S21| IC=80mA, VCE=8V, f=900MHz 11.0 12.0 dB
Insertion Power Gain |S21| IC=80mA, VCE=8V, f=1800MHz 5.0 5.5 dB
Maximum Unilateral Power Gain GUM IC=80mA, VCE=8V, f=433MHz 18.0 19.5 dB
Maximum Unilateral Power Gain GUM IC=80mA, VCE=8V, f=900MHz 11.5 12.5 dB
Maximum Unilateral Power Gain GUM IC=80mA, VCE=8V, f=1.8GHz 6.5 7.0 dB

Absolute Maximum Ratings (Tamb=25):

Parameter Symbol Rating Unit
Collector-Base Voltage VCBO 25 V
Collector-Emitter Voltage VCEO 15 V
Emitter-Base Voltage VEBO 2.5 V
Collector Current ICM 300 mA
Power Dissipation PT 2000 mW
Maximum Junction Temperature TJ -40150
Storage Temperature Tstg -65+150

Package Dimensions (Units:mm):

Dimension Value (mm)
Length 4.60.1
Width 4.20.05
Height 1.60.15
Lead Length (Typical) 1.5Typical
Pin Pitch (Typical) 0.450.1
Body Thickness (Typical) 0.50.1
Base Width (Typical) 1.50.2

Pin Connections:

  • 1. Base
  • 2 & 4. Collector
  • 3. Emitter

2303300930_Slkor-BFU590Q_C5375297.pdf

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NPN Silicon Epitaxial Transistor Slkor BFU590Q for Microwave Low Noise Amplifier Applications

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Product Detail
Emitter-Base Voltage(Vebo) :
2.5V
Current - Collector Cutoff :
50nA
DC Current Gain :
300@80mA,8V
Transition frequency(fT) :
8.5GHz
Number :
1 NPN
type :
NPN
Contact Supplier
NPN Silicon Epitaxial Transistor Slkor BFU590Q for Microwave Low Noise Amplifier Applications

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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