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Low VCE SAT NPN silicon transistor UTC 2SD1664G-R-AB3-R epitaxial planar type for electronic circuit
Low VCE SAT NPN silicon transistor UTC 2SD1664G-R-AB3-R epitaxial planar type for electronic circuit
Specifications
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
500nA
DC Current Gain :
390@100mA,3V
Transition frequency(fT) :
150MHz
Vce Saturation(VCE(sat)) :
400mV@500mA,50mA
type :
NPN
Pd - Power Dissipation :
1.9W
Current - Collector(Ic) :
1A
Collector - Emitter Voltage VCEO :
32V
Description :
Bipolar (BJT) Transistor NPN 32V 1A 150MHz 1.9W Surface Mount SOT-89
Mfr. Part # :
2SD1664G-R-AB3-R
Model Number :
2SD1664G-R-AB3-R
Package :
SOT-89
Description

Product Overview

The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor designed for medium power applications. It features a low VCE(SAT) of 0.15V (Typ.) at IC/IB= 500mA/50mA and complements the 2SB1132. This transistor is suitable for various electronic circuits requiring reliable NPN amplification and switching capabilities.

Product Attributes

  • Brand: UNISONIC TECHNOLOGIES CO., LTD
  • Material: NPN Silicon Transistor
  • Certifications: Lead Free, Halogen Free

Technical Specifications

ParameterSymbolRating (Unit)Test ConditionsMinTypMaxUnit
Absolute Maximum Ratings
Collector-Base VoltageVCBO40 VV
Collector-Emitter VoltageVCEO32 VV
Emitter-Base VoltageVEBO5 VV
Collector Current DCIC1 AA
Collector Current (Pulse)IC2 ADuty=1/2, PW=20msA
Collector Power Dissipation (SOT-89)PC0.5 WW
Collector Power Dissipation (SOT-23)PC0.3 WW
Collector Power Dissipation (TO-252)PC1.9 WW
Junction TemperatureTJ+150 CC
Storage TemperatureTSTG-55 ~ +150 CC
Electrical Characteristics
Collector Base Breakdown VoltageBVCBO40 VIC= 50AV
Collector Emitter Breakdown VoltageBVCEO32 VIC=1mAV
Emitter Base Breakdown VoltageBVEBO5 VIE=50AV
Collector Cut-Off CurrentICBO0.5 AVCB=20VA
Emitter Cut-Off CurrentIEBO0.5 AVEB=4VA
DC Current GainhFE82 - 390VCE= 3V, Ic= 100mA82390
Collector-Emitter Saturation VoltageVCE(SAT)0.15 - 0.4 VIC/IB=500mA /50mA0.150.4V
Transition FrequencyfT150 MHzVCE=5V, IE=-50mA, f=100MHz150MHz
Output CapacitanceCob15 pFVCB= 10V, IE= 0A, f=1MHz15pF

2212091108_UTC-2SD1664G-R-AB3-R_C5310378.pdf

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Low VCE SAT NPN silicon transistor UTC 2SD1664G-R-AB3-R epitaxial planar type for electronic circuit

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Product Detail
Emitter-Base Voltage(Vebo) :
5V
Current - Collector Cutoff :
500nA
DC Current Gain :
390@100mA,3V
Transition frequency(fT) :
150MHz
Vce Saturation(VCE(sat)) :
400mV@500mA,50mA
type :
NPN
Contact Supplier
Low VCE SAT NPN silicon transistor UTC 2SD1664G-R-AB3-R epitaxial planar type for electronic circuit

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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