The UTC PZTA42/43 are high voltage NPN silicon transistors designed for telephone switch and high voltage switch applications. They offer high current gain and are complementary to the UTC PZTA92/93 series.
| Parameter | Symbol | PZTA42 Rating | PZTA43 Rating | Unit | Conditions |
| Collector-Base Voltage | VCBO | 300 | 200 | V | |
| Collector-Emitter Voltage | VCEO | 300 | 200 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | ||
| Collector Current | IC | 500 | mA | ||
| Collector Power Dissipation | PC | 1 | W | TA=25C | |
| Junction Temperature | TJ | 150 | C | ||
| Storage Temperature | TSTG | -55 ~ +150 | C | ||
| Collector-Base Breakdown Voltage | BVCBO | 300 | 200 | V | IC =100A, IE=0 |
| Collector-Emitter Breakdown Voltage | BVCEO | 300 | 200 | V | IC =1mA, IB=0 |
| Emitter-Base Breakdown Voltage | BVEBO | 6 | V | IE=100A, IC =0 | |
| Collector Cut-Off Current | ICBO | 100 | nA | VCB=200V, IE=0 (PZTA42); VCB=160V, IE=0 (PZTA43) | |
| Emitter Cut-Off Current | IEBO | 100 | nA | VBE=6V, IC =0 (PZTA42); VBE=4V, IC =0 (PZTA43) | |
| DC Current Gain | hFE | 80 | VCE=10V, IC =1mA | ||
| DC Current Gain | hFE | 80-300 | VCE=10V, IC =10mA | ||
| DC Current Gain | hFE | 80 | VCE=10V, IC =30mA | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.2 | V | IC =20mA, IB=2mA | |
| Base-Emitter Saturation Voltage | VBE(SAT) | 0.90 | V | IC =20mA, IB=2mA | |
| Current Gain Bandwidth Product | fT | 50 | MHz | VCE=20V, IC =10mA, f=100MHz | |
| Collector Base Capacitance | CCB | 3 | 4 | pF | VCB=20V, IE=0, f=1MHz |