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TOSHIBA 2SA1736 TE12L ZC Silicon PNP Epitaxial Transistor Suitable for Power Switching and Amplifier
TOSHIBA 2SA1736 TE12L ZC Silicon PNP Epitaxial Transistor Suitable for Power Switching and Amplifier
Specifications
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
100nA
DC Current Gain :
120@100mA,2V
Transition frequency(fT) :
100MHz
Vce Saturation(VCE(sat)) :
500mV
type :
PNP
Pd - Power Dissipation :
1W
Current - Collector(Ic) :
3A
Collector - Emitter Voltage VCEO :
50V
Operating Temperature :
-55℃~+150℃
Description :
Bipolar (BJT) Transistor PNP 50V 3A 100MHz 1000mW Surface Mount SOT-89
Mfr. Part # :
2SA1736(TE12L,ZC)
Model Number :
2SA1736(TE12L,ZC)
Package :
SOT-89
Description

Product Overview

The TOSHIBA 2SA1736 is a silicon PNP epitaxial transistor designed for power amplifier and power switching applications. It features a low saturation voltage (VCE(sat) = -0.5 V max at IC = -1.5 A) and high-speed switching time (tstg = 0.2 s typ.). This transistor is complementary to the 2SC4541 and comes in a small flat package.

Product Attributes

  • Brand: TOSHIBA
  • Type: Silicon PNP Epitaxial Transistor (PCT process)
  • Package: PW-MINI (JEDEC JEITA SC-62)
  • Weight: 0.05 g (typ.)
  • Certifications: RoHS COMPATIBLE / [[G]]/RoHS (indicated by a line beside Lot No.)

Technical Specifications

CharacteristicsSymbolTest ConditionMinTyp.MaxUnit
Collector cut-off currentICBOVCB = -60 V, IE = 0-0.1A
Emitter cut-off currentIEBOVEB = -6 V, IC = 0-0.1A
Collector-emitter breakdown voltageV(BR)CEOIC = -10 mA, IB = 0-50V
DC current gain (1)hFEVCE = -2 V, IC = -100 mA120400
DC current gain (2)hFEVCE = -2 V, IC = -2 A40
Collector-emitter saturation voltageVCE(sat)IC = -1.5 A, IB = -75 mA-0.5V
Base-emitter saturation voltageVBE(sat)IC = -1.5 A, IB = -75 mA-1.2V
Transition frequencyfTVCE = -2 V, IC = -100 mA100MHz
Collector output capacitanceCobVCB = -10 V, IE = 0, f = 1 MHz32pF
Turn-on timeton0.1s
Storage timetstg0.2s
Fall timetf0.1s

Absolute Maximum Ratings

CharacteristicsSymbolRatingUnit
Collector-base voltageVCBO-60V
Collector-emitter voltageVCEO-50V
Emitter-base voltageVEBO-6V
Collector currentIC-3A
Base currentIB-0.6A
Collector power dissipation (Note 1)PC500mW
Collector power dissipation (Note 1)PC1000mW
Junction temperatureTj150C
Storage temperature rangeTstg-55 to 150C

Note 1: Mounted on a ceramic substrate (250 mm2 0.8 t)


2410121807_TOSHIBA-2SA1736-TE12L-ZC_C5331486.pdf

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TOSHIBA 2SA1736 TE12L ZC Silicon PNP Epitaxial Transistor Suitable for Power Switching and Amplifier

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Product Detail
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
100nA
DC Current Gain :
120@100mA,2V
Transition frequency(fT) :
100MHz
Vce Saturation(VCE(sat)) :
500mV
type :
PNP
Contact Supplier
TOSHIBA 2SA1736 TE12L ZC Silicon PNP Epitaxial Transistor Suitable for Power Switching and Amplifier

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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