MachineU > China Products
NPN epitaxial silicon transistor UTC 2SC5200L-R-B-T3L-T for in audio frequency amplifier output stages
NPN epitaxial silicon transistor UTC 2SC5200L-R-B-T3L-T for in audio frequency amplifier output stages
Specifications
Current - Collector Cutoff :
5uA
Emitter-Base Voltage(Vebo) :
5V
DC Current Gain :
160@1A,5V
Transition frequency(fT) :
30MHz
Vce Saturation(VCE(sat)) :
3V@8A,0.8A
Pd - Power Dissipation :
150W
Current - Collector(Ic) :
15A
Collector - Emitter Voltage VCEO :
230V
Description :
160@1A,5V 150W 15A 230V TO-3PL Single Bipolar Transistors RoHS
Mfr. Part # :
2SC5200L-R-B-T3L-T
Model Number :
2SC5200L-R-B-T3L-T
Package :
TO-3PL
Description

UNISONIC TECHNOLOGIES CO., LTD 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR

The 2SC5200 is an NPN epitaxial silicon transistor from UNISONIC TECHNOLOGIES CO., LTD, specifically recommended for 100W high fidelity audio frequency amplifier output stages. It is complementary to the UTC 2SA1943.

Product Attributes

  • Brand: UNISONIC TECHNOLOGIES CO., LTD
  • Type: NPN Epitaxial Silicon Transistor
  • Complementary to: UTC 2SA1943

Technical Specifications

Ordering NumberPackagePin AssignmentLead FreeHalogen Free
2SC5200L-x-T3P-TTO-3PB C ETube
2SC5200G-x-T3P-TTO-3PB C ETube
2SC5200L-x-T3B-TTO-3PBB C ETube
2SC5200G-x-T3B-TTO-3PBB C ETube
2SC5200L-x-T3L-TTO-3PLB C ETube
2SC5200G-x-T3L-TTO-3PLB C ETube
ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-Base VoltageVCBO230V
Collector-Emitter VoltageVCEO230V
Emitter-Base VoltageVEBO5V
Collector CurrentIC15A
Base CurrentIB1.5A
Collector Power DissipationPC(TC=25C)150W
Junction TemperatureTJ+150C
Storage Temperature RangeTSTG-55~150C
Collector-Emitter Breakdown VoltageV(BR)CEOIC= 50mA, IB=0230V
Collector-Emitter Saturation VoltageVCE(SAT)IC= 8A, IB= 0.8A0.43.0V
Base -Emitter VoltageVBEVCE= 5V, IC= 7A1.01.5V
Collector Cut-off CurrentICBOVCB = 230V, IE=05.0A
Emitter Cut-off CurrentIEBOVEB= 5V, IC=05.0A
DC Current GainhFE1VCE= 5V, IC= 1A55160
DC Current GainhFE2VCE= 5V, IC= 7A3560
Transition FrequencyfTVCE= 5V, IC= 1A30MHz
Collector Output CapacitanceCOBVCB= 10V, IE=0, f=1MHz200pF
RANKRange
R55 ~ 110
O80 ~ 160

2212091108_UTC-2SC5200L-R-B-T3L-T_C5310427.pdf

Send your message to this supplier
Send Now

NPN epitaxial silicon transistor UTC 2SC5200L-R-B-T3L-T for in audio frequency amplifier output stages

Ask Latest Price
Product Detail
Current - Collector Cutoff :
5uA
Emitter-Base Voltage(Vebo) :
5V
DC Current Gain :
160@1A,5V
Transition frequency(fT) :
30MHz
Vce Saturation(VCE(sat)) :
3V@8A,0.8A
Pd - Power Dissipation :
150W
Contact Supplier
NPN epitaxial silicon transistor UTC 2SC5200L-R-B-T3L-T for in audio frequency amplifier output stages

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single Bipolar Transistors
MachineU China Products
Contact Supplier
Submit Requirement