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Signal amplifier transistor LRC L2SC4083PWT1G high frequency device suitable for automotive qualified
Signal amplifier transistor LRC L2SC4083PWT1G high frequency device suitable for automotive qualified
Specifications
Emitter-Base Voltage(Vebo) :
3V
Current - Collector Cutoff :
500nA
Pd - Power Dissipation :
150mW
Transition frequency(fT) :
3.2GHz
type :
NPN
Current - Collector(Ic) :
50mA
Collector - Emitter Voltage VCEO :
11V
Operating Temperature :
-55℃~+150℃
Description :
Bipolar (BJT) Transistor NPN 11V 50mA 3.2GHz 0.15W Surface Mount SC-70(SOT-323)
Mfr. Part # :
L2SC4083PWT1G
Model Number :
L2SC4083PWT1G
Package :
SC-70(SOT-323)
Description

Product Overview

High-Frequency Amplifier designed for various electronic applications. This device offers excellent performance characteristics, including high transition frequency and low noise factor, making it suitable for demanding signal amplification tasks.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Marking: L2SC4083PWT1G
  • Device Marking: 1D
  • Shipping: 3000/Tape&Reel, 10000/Tape&Reel
  • Compliance: RoHS requirements
  • Automotive Qualification: AEC-Q101 Qualified and PPAP Capable (for S- prefix models)
  • Package Type: SC-70 / SOT-323

Technical Specifications

ParameterSymbolMin.Typ.Max.UnitConditions
Collector-base breakdown voltageBVCBO20VIC = 10A
Collector-emitter breakdown voltageBVCEO11VIC = 1mA
Emitter-base breakdown voltageBVEBO3VIE = 10A
Collector cutoff currentICBO82nAVCB = 10V
Emitter cutoff currentIEBO1.4nAVEB = 2V
DC current transfer ratiohFE3.2VCE = 2V, IC = 10mA
Transition frequencyfT180MHzVCE = 6V, IC = 2mA, f = 500MHz
Output capacitanceCob1.5pFVCB = 10V, IE = 0A, f = 1MHz
Collector-emitter saturation voltageVCE(sat)0.5VIC/IB = 10mA/5mA
Collector-base time constantrbb'Cc3.5nsVCB = 10V, IC = 10mA, f = 500MHz
Noise factorNF0.8dBVCB = 10V, IC = 10mA, f = 31.8MHz, Rg = 50

Absolute Maximum Ratings

ParameterSymbolLimitsUnit
Collector-base voltageVCBO20V
Collector-emitter voltageVCEO11V
Emitter-base voltageVEBO3V
Collector currentIC50mA
Collector power dissipationPC0.15W
Junction temperatureTj150C
Storage temperatureTstg-55~+150C

2412052036_LRC-L2SC4083PWT1G_C12064.pdf

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Signal amplifier transistor LRC L2SC4083PWT1G high frequency device suitable for automotive qualified

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Product Detail
Emitter-Base Voltage(Vebo) :
3V
Current - Collector Cutoff :
500nA
Pd - Power Dissipation :
150mW
Transition frequency(fT) :
3.2GHz
type :
NPN
Current - Collector(Ic) :
50mA
Contact Supplier
Signal amplifier transistor LRC L2SC4083PWT1G high frequency device suitable for automotive qualified

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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