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Silicon NPN General Purpose Transistor LRC LBC847BLT1G with High ESD Rating and Moisture Sensitivity Level 1
Silicon NPN General Purpose Transistor LRC LBC847BLT1G with High ESD Rating and Moisture Sensitivity Level 1
Specifications
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
5uA
Pd - Power Dissipation :
300mW
Transition frequency(fT) :
100MHz
type :
NPN
Current - Collector(Ic) :
100mA
Collector - Emitter Voltage VCEO :
45V
Operating Temperature :
-55℃~+150℃
Description :
Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 300mW Surface Mount SOT-23
Mfr. Part # :
LBC847BLT1G
Model Number :
LBC847BLT1G
Package :
SOT-23
Description

LESHAN RADIO COMPANY, LTD. LBC846ALT1G Series NPN Silicon General Purpose Transistors

The LBC846ALT1G Series are NPN silicon general purpose transistors designed for various applications. They feature moisture sensitivity level 1 and high ESD ratings. The S-prefix variants are qualified for automotive and other applications requiring unique site and control change requirements, meeting AEC-Q101 standards and being PPAP capable.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material: Silicon
  • Certifications: AEC-Q101 Qualified (S-prefix variants)
  • RoHS Compliance: Declared

Technical Specifications

SeriesDevice MarkingCollectorEmitter Voltage (VCEO) [Vdc]CollectorBase Voltage (VCBO) [Vdc]EmitterBase Voltage (VEBO) [Vdc]Collector Current (IC) [mAdc]Total Device Dissipation (PD) [mW]Thermal Resistance (RJA) [C/W]Junction and Storage Temperature Range [C]
LBC846ALT1G SeriesLBC846A, LBC846B65806.0100225 (FR-5) / 300 (Alumina)556 (FR-5) / 417 (Alumina)55 to +150
LBC846ALT1G SeriesLBC847, LBC85045506.0100225 (FR-5) / 300 (Alumina)556 (FR-5) / 417 (Alumina)55 to +150
LBC846ALT1G SeriesLBC848, LBC84930305.0100225 (FR-5) / 300 (Alumina)556 (FR-5) / 417 (Alumina)55 to +150
S-LBC846ALT1G Series(Automotive Qualified)65806.0100225 (FR-5) / 300 (Alumina)556 (FR-5) / 417 (Alumina)55 to +150

Electrical Characteristics

CharacteristicSymbolLBC846A,BLBC847A,B,C, LBC850B,CLBC848A,B,C, LBC849B,CUnitConditions
CollectorEmitter Breakdown VoltageV(BR)CEO654530VdcIC = 10 mA
CollectorEmitter Breakdown VoltageV(BR)CES805030VdcIC = 10 A, VEB = 0
CollectorBase Breakdown VoltageV(BR)CBO805030VdcIC = 10 A
EmitterBase Breakdown VoltageV(BR)EBO6.06.05.0VdcIE = 1.0 mA
Collector Cutoff CurrentICBO15 (nA) / 5.0 (A)nA / AVCB = 30 V / VCB = 30 V, TA = 150C
DC Current GainhFE110200180450220800IC = 2.0 mA, VCE = 5.0 V
CollectorEmitter Saturation VoltageVCE(sat)0.250.6VIC = 10 mA, IB = 0.5 mA
CollectorEmitter Saturation VoltageVCE(sat)0.250.6VIC = 100 mA, IB = 5.0 mA
BaseEmitter Saturation VoltageVBE(sat)0.70.90.70.9VIC = 10 mA, IB = 0.5 mA
BaseEmitter Saturation VoltageVBE(sat)0.70.90.70.9VIC = 100 mA, IB = 5.0 mA
BaseEmitter VoltageVBE(on)580660700770mVIC = 2.0 mA, VCE = 5.0 V
BaseEmitter VoltageVBE(on)580660700770mVIC = 10 mA, VCE = 5.0 V
CurrentGain Bandwidth ProductfT100MHzIC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz
Output CapacitanceCobo4.5pFVCB = 10 V, f = 1.0 MHz
Noise FigureNF4.010dBIC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz

2304140030_LRC-LBC847BLT1G_C131853.pdf

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Silicon NPN General Purpose Transistor LRC LBC847BLT1G with High ESD Rating and Moisture Sensitivity Level 1

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Product Detail
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
5uA
Pd - Power Dissipation :
300mW
Transition frequency(fT) :
100MHz
type :
NPN
Current - Collector(Ic) :
100mA
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Silicon NPN General Purpose Transistor LRC LBC847BLT1G with High ESD Rating and Moisture Sensitivity Level 1

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bridge Rectifiers, Single Bipolar Transistors, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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