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Electronic circuit design component Slkor 2SB1198R PNP transistor suitable for switching and amplifier
Electronic circuit design component Slkor 2SB1198R PNP transistor suitable for switching and amplifier
Specifications
Current - Collector Cutoff :
500nA
Emitter-Base Voltage(Vebo) :
5V
DC Current Gain :
390
Transition frequency(fT) :
180MHz
Number :
1 PNP
type :
PNP
Vce Saturation(VCE(sat)) :
500mV@500mA,50mA
Pd - Power Dissipation :
200mW
Current - Collector(Ic) :
500mA
Collector - Emitter Voltage VCEO :
80V
Description :
Bipolar (BJT) Transistor PNP 80V 500mA 180MHz 200mW Surface Mount SOT-23
Mfr. Part # :
2SB1198R
Model Number :
2SB1198R
Package :
SOT-23
Description

Product Overview

The 2SB1198 is a PNP transistor designed for switching and AF amplifier applications. It offers a high DC current gain and operates within specified absolute maximum ratings at 25 ambient temperature. This transistor is available in the SOT-23 package, suitable for various electronic circuit designs.

Product Attributes

  • Marking Code: 2SB1198Q: BNQ, 2SB1198R: BNR
  • Manufacturer: SLKOR Micro
  • Document Revision: Rev.1
  • Document Date: 12 September 2019

Technical Specifications

Parameter Symbol Gain Group Q Gain Group R Value Unit Conditions
Collector Base Voltage -VCBO 80 V
Collector Emitter Voltage -VCEO 80 V
Emitter Base Voltage -VEBO 5 V
Collector Current -IC 500 mA
Maximum Power Dissipation PD 200 mW
Junction Temperature TJ 150
Storage Temperature Range TSTG -55 to +150
DC Current Gain hFE 120 270 VCE = -3 V, IC = -100 mA
DC Current Gain hFE 180 390 VCE = -3 V, IC = -100 mA
Collector Base Cutoff Current -ICBO 500 nA VCB = -50 V
Collector Emitter Cutoff Current -ICEO 5 A VCE = -64 V
Emitter Base Cutoff Current -IEBO 500 nA VEB = -4 V
Collector Base Breakdown Voltage -V(BR)CBO 80 V IC = -50 A
Collector Emitter Breakdown Voltage -V(BR)CEO 80 V IC = -2 mA
Emitter Base Breakdown Voltage -V(BR)EBO 5 V IE = -50 A
Collector Emitter Saturation Voltage -VCE(sat) 0.5 V IC = -500 mA, IB = -50 mA
Base Emitter Saturation Voltage -VBE(sat) 1.2 V IC = -500 mA, IB = -50 mA
Transition Frequency FT 180 MHz VCE = -10 V, IC = -50 mA, f = 100 MHz
Output Capacitance Cob 11 pF VCB = -10 V, f = 1 MHz

Package Outline

SOT-23

Soldering and Storage Conditions

  • Reflow Soldering: Recommended peak temperature over 245. Adjust parameters (time length of peak temperature, time length of soldering, thickness of solder paste) if peak temperature is below 245.
  • Hand Soldering: Temperature: 370, Time: 3s max., Times: one time.
  • Storage Conditions: Temperature: 5 to 40, Humidity: 30 to 80% RH.
  • Recommended Storage Period: One year after manufacturing.

2312160125_Slkor-2SB1198R_C19632499.pdf

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Electronic circuit design component Slkor 2SB1198R PNP transistor suitable for switching and amplifier

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Product Detail
Current - Collector Cutoff :
500nA
Emitter-Base Voltage(Vebo) :
5V
DC Current Gain :
390
Transition frequency(fT) :
180MHz
Number :
1 PNP
type :
PNP
Contact Supplier
Electronic circuit design component Slkor 2SB1198R PNP transistor suitable for switching and amplifier

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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