MachineU > China Products
Slkor BC847BT NPN Silicon Epitaxial Transistor Featuring 45V Collector Emitter Voltage for Switching and Amplifier
Slkor BC847BT NPN Silicon Epitaxial Transistor Featuring 45V Collector Emitter Voltage for Switching and Amplifier
Specifications
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
15nA
DC Current Gain :
800@2mA,5V
Transition frequency(fT) :
300MHz
type :
NPN
Vce Saturation(VCE(sat)) :
600mV
Pd - Power Dissipation :
150mW
Current - Collector(Ic) :
100mA
Collector - Emitter Voltage VCEO :
45V
Description :
Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 150mW Surface Mount SOT-523
Mfr. Part # :
BC847BT
Model Number :
BC847BT
Package :
SOT-523
Description

Product Overview

The BC846T-BC850T series is an NPN Silicon Epitaxial Transistor designed for switching and amplifier applications. These transistors offer a range of collector-emitter voltage ratings from 30V to 65V and a collector current of up to 100mA, with a peak collector current of 200mA. They are suitable for various electronic circuits requiring reliable amplification and switching capabilities.

Product Attributes

  • Brand: slkormicro.com
  • Type: NPN Silicon Epitaxial Transistor
  • Application: Switching and amplifier applications

Technical Specifications

Parameter Symbol BC846T BC847T, BC850T BC848T, BC849T Value Unit
Collector Base Voltage VCBO 80 50 30 V
Collector Emitter Voltage VCEO 65 45 30 V
Emitter Base Voltage VEBO 6 5 6 V
Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Power Dissipation Ptot 150 mW
Junction Temperature Tj 150 OC
Storage Temperature Range Tstg - 65 to + 150 OC
Characteristics at Ta = 25 OC Symbol Min. Typ. Max. Unit
DC Current Gain (VCE = 5 V, IC =2 mA) hFE 110 200
Current Gain Group A hFE 220 450
Current Gain Group B hFE 800
Current Gain Group C hFE
Collector Base Cutoff Current (VCB = 30 V) ICBO - - 15 nA
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) - - 250 mV
Collector Emitter Saturation Voltage (IC = 100 mA, IB = 5 mA) VCE(sat) - - 600 mV
Base Emitter On Voltage (VCE = 5 V, IC = 2 mA) VBE(on) 580 - mV
Base Emitter On Voltage (VCE = 5 V, IC = 10 mA) VBE(on) - 700 720 mV
Transition Frequency (VCE = 5 V, IC = 10 mA, f = 100 MHz) fT - 300 - MHz
Output Capacitance (VCB = 10 V, f = 1 MHz) Cob - - 6 pF
MARKING CODE TYPE
1A 846AT
1B 846BT
1C 846CT
1E 847AT
1F 847BT
1G 847CT
1J 848AT
1K 848BT
1L 848CT
2A 849AT
2B 849BT
2C 849CT
2E 850AT
2F 850BT
2G 850CT
Symbol Dimension in Millimeters Min Max
A 0.60 0.80
A1 0.010 0.100
B 0.95 1.05
bp 0.26 0.40
bq 0.16 0.30
C 0.09 0.15
D 1.50 1.70
E 0.70 0.85
HE 1.45 1.75
Lp 0.16 0.36
0 5

2210091830_Slkor-BC847BT_C5186022.pdf

Send your message to this supplier
Send Now

Slkor BC847BT NPN Silicon Epitaxial Transistor Featuring 45V Collector Emitter Voltage for Switching and Amplifier

Ask Latest Price
Product Detail
Emitter-Base Voltage(Vebo) :
6V
Current - Collector Cutoff :
15nA
DC Current Gain :
800@2mA,5V
Transition frequency(fT) :
300MHz
type :
NPN
Vce Saturation(VCE(sat)) :
600mV
Contact Supplier
Slkor BC847BT NPN Silicon Epitaxial Transistor Featuring 45V Collector Emitter Voltage for Switching and Amplifier

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Single Bipolar Transistors
MachineU China Products
Contact Supplier
Submit Requirement