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High gain amplifier transistor ROHM 2SB852KT146B with built in resistor and Darlington configuration
High gain amplifier transistor ROHM 2SB852KT146B with built in resistor and Darlington configuration
Specifications
Current - Collector Cutoff :
1uA
Pd - Power Dissipation :
200mW
DC Current Gain :
5000
Transition frequency(fT) :
200MHz
type :
PNP
Current - Collector(Ic) :
300mA
Collector - Emitter Voltage VCEO :
32V
Operating Temperature :
-
Description :
200mW 5000 PNP 300mA 32V TO-236-3(SOT-23-3) Single Bipolar Transistors RoHS
Mfr. Part # :
2SB852KT146B
Model Number :
2SB852KT146B
Package :
TO-236-3(SOT-23-3)
Description

Product Overview

The 2SB852K is a high-gain amplifier transistor featuring a Darlington connection for enhanced DC current gain. It includes a built-in 4k resistor between the base and emitter and complements the 2SD1383K. This transistor is suitable for high gain amplifier applications.

Product Attributes

  • Brand: ROHM
  • Package: SOT-346 (SMT3)
  • Taping Code: T146
  • Reel Size: 180 mm
  • Tape Width: 8 mm
  • Basic Ordering Unit: 3000 pcs
  • Marking: U

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings (Ta = 25C)
Collector-base voltage VCBO -40 V
Collector-emitter voltage VCES -32 V
Emitter-base voltage VEBO -6 V
Collector current IC -0.3 A
Collector current (Pulsed) ICP*1 Pw=10ms, duty=1/15 -1.5 A
Power dissipation PD*2 Each terminal mounted on a reference land 200 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 +150
Electrical Characteristics (Ta = 25C)
Collector-base breakdown voltage BVCBO IC = -100A -40 - - V
Collector-emitter breakdown voltage BVCES IC = -1mA, RBE = 0 -32 - - V
Emitter-base breakdown voltage BVEBO IE = -100A -6 - - V
Collector cut-off current ICBO VCB = -24V - - -1 A
Emitter cut-off current IEBO VEB = -4.5V - - -1 A
Collector-emitter saturation voltage VCE(sat)*3 IC = -200mA, IB = -0.4mA - - -1.5 V
DC current gain hFE*3 VCE = -5V, IC = -100mA 1k - -
Transition frequency fT*4 VCE = -5V, IE = 10mA, f = 100MHz - 200 - MHz
Output capacitance Cob VCB = -10V, IE = 0mA, f = 1MHz - 3.0 - pF

*1 Pw=10ms,duty=1/15
*2 Each terminal mounted on a reference land
*3 Pulsed
*4 Characteristics of built-in transistor


2404121754_ROHM-2SB852KT146B_C4365977.pdf

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High gain amplifier transistor ROHM 2SB852KT146B with built in resistor and Darlington configuration

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Product Detail
Current - Collector Cutoff :
1uA
Pd - Power Dissipation :
200mW
DC Current Gain :
5000
Transition frequency(fT) :
200MHz
type :
PNP
Current - Collector(Ic) :
300mA
Contact Supplier
High gain amplifier transistor ROHM 2SB852KT146B with built in resistor and Darlington configuration

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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