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GRM1201 Multi-Stage Roots Dry Vacuum Pump 1200 m³/h Oil-Free for Semiconductor PECVD MOCVD
GRM1201 Multi-Stage Roots Dry Vacuum Pump 1200 m³/h Oil-Free for Semiconductor PECVD MOCVD
Specifications
Ultimate Pressure :
≤0.15 Pa
Pumping Speed :
1200 m³/h
Place of Origin :
China
Packaging Details :
Export Standard Wooden Case Packaging
Inlet :
ISO160
Dimensions :
865×344×751 mm
Certification :
CE
Supply Ability :
50 Sets/Month
Noise :
≤63 dB(A)
Weight :
260 kg
N2 Purge :
0.2-0.6 MPa, 12-50 L/min
Brand Name :
Baosi
Delivery Time :
15-30 Working Days
Price :
USD 8500-12500/Set
Outlet :
KF25
Motor Power :
1.9+1.9 kW
Model Number :
GRM1201
Voltage :
380V/3-Phase
Cooling Water :
0.1-0.6 MPa, ≥4 L/min
Payment Terms :
T/T,L/C
MOQ :
1 Set
Description
GRM1201 Multi-Stage Roots Dry Vacuum Pump 1200 m³/h Oil-Free High-Speed Vacuum Pump for Semiconductor PECVD MOCVD
GRM1201 Multi-Stage Roots Dry Vacuum Pump — 1200 m³/h High-Speed Solution

The GRM1201 is a high-speed multi-stage roots dry vacuum pump delivering 1200 m³/h pumping speed with ultimate pressure of ≤0.15 Pa. Sharing the same compact platform as the GRM601 (865 * 344 * 751 mm, 260 kg) but with ISO160 inlet for higher throughput, it excels in PECVD, MOCVD and demanding semiconductor clean and medium process applications.

Key Features
  • High-Speed Multi-Stage Roots: 1200 m³/h with low power consumption
  • Dual Motor Efficiency: 1.9+1.9 kW permanent magnet synchronous motors
  • Excellent Ultimate Pressure: ≤0.15 Pa meets demanding process requirements
  • Ultra-Quiet: ≤63 dB(A) — cleanroom-compatible noise level
  • Large ISO160 Inlet: Handles high gas throughput for production-scale applications
  • Oil-Free Clean Vacuum: No oil contamination for sensitive semiconductor processes
  • Superior Dust Handling: Advanced rotor design for particle-rich environments
  • Compact Platform: Same footprint as GRM601 — easy line integration
  • Triple Sealing System: Lip seal + labyrinth + nitrogen purge guarantee oil-free vacuum
  • Smart Connectivity: I/O and RS485 (Modbus) for remote factory integration
Technical Specifications
Model GRM1201
Pumping Speed 1200 m³/h
Ultimate Pressure (w/o purge) ≤0.15 Pa
Motor Power 1.9 + 1.9 kW
Voltage 380V (3-Phase)
Inlet Connection ISO160
Outlet Connection KF25
Noise Level ≤63 dB(A)
Weight 260 kg
Dimensions (L*W*H) 865 * 344 * 751 mm
Cooling Water Pressure 0.1–0.6 MPa
Cooling Water Flow ≥4 L/min
N₂ Purge Pressure 0.2–0.6 MPa
N₂ Purge Flow 12–50 L/min
Operating Temperature 5–40°C; ≤90% RH
Applications
  • Semiconductor: PECVD, MOCVD, SACVD, RTP, HDP-CVD, ALD, Metal Etch, Silicon Etch
  • Photovoltaic: High-throughput solar cell manufacturing lines
  • Lithium Battery: Production-scale cell drying and electrolyte processing
  • Flat Panel Display: OLED and LCD manufacturing
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GRM1201 Multi-Stage Roots Dry Vacuum Pump 1200 m³/h Oil-Free for Semiconductor PECVD MOCVD

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Product Detail
Ultimate Pressure :
≤0.15 Pa
Pumping Speed :
1200 m³/h
Place of Origin :
China
Packaging Details :
Export Standard Wooden Case Packaging
Inlet :
ISO160
Dimensions :
865×344×751 mm
Contact Supplier
GRM1201 Multi-Stage Roots Dry Vacuum Pump 1200 m³/h Oil-Free for Semiconductor PECVD MOCVD

Ningbo Baosi Energy Equipment Co., Ltd.

Verified Supplier
9 Years
zhejiang, ningbo
Since 2005
Business Type :
Manufacturer, Importer, Exporter
Main Products :
Rotary Vane Vacuum Pump, DRV series Two-Stage Oil Rotary Vane Vacuum Pump, Scroll Vacuum Pump
Total Annual :
200000000-300000000
Employee Number :
1500~2200
Certification Level :
Verified Supplier
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