MMBT5551LT1G High Voltage NPN Transistor 160V VCEO, 300mA IC Low Saturation Voltage SOT-23 Package Halogen-Free Green Material Ideal for Amplification & Switching Circuits

Features

S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Applications

1:Signal Amplification: Used in audio pre-amplifiers, sensor interfaces, and other small-signal amplification stages.

2:Switching Circuits: Ideal for driving relays, solenoids, LEDs, and other loads in power management systems and logic interfaces.

3:Power Management: Employed in switch-mode power supplies (SMPS), DC-DC converters, and voltage regulators.

4:Driver Stages: Used to buffer signals from microcontrollers or ICs to control higher-current devices.

5:General Purpose Use: A reliable component for consumer electronics, industrial control systems, automotive modules, and telecommunications equipment.

Description

The MMBT5551LT1G is a high-voltage, general-purpose NPN Bipolar Junction Transistor (BJT) housed in a space-saving SOT-23 surface-mount package. It is engineered to deliver robust performance in a wide range of electronic circuits, combining high voltage capability with a substantial current rating.

This transistor is characterized by its high DC current gain, low saturation voltage, and fast switching speeds. Manufactured with halogen-free and lead-free materials, it is fully compliant with RoHS and other environmental standards, making it a reliable and eco-friendly choice for modern electronics.

INFORMATION

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