Janhoo 1550nm Gain Chip
The JHBF Gain Chip series is designed as a semiconductor optical element that serves as the optical gain medium in external cavity semiconductor lasers. JHBF offers both low reflectivity and high reflectivity types for the vertical facet side reflectivity. Products are available in Chip or COC (Chip on Carrier) formats, and can also be packaged into devices according to customer requirements.
Product Features
- Proprietary chips with independent controllability
- C-Band operation
- Low ripple products
- HR Reflectivity 95%
Applications
- External cavity tunable light source (TLS)
- Silicon photonics tunable light source
Product Specifications
| Parameter |
Symbol |
Working conditions |
Min |
Typ |
Max |
Unit |
| Working current |
Iop |
|
|
180 |
240 |
mA |
| Forward Voltage |
VF |
--- |
|
1.2 |
2 |
V |
| Centre wavelength |
λc |
If=180mA,Tc=25℃ |
|
1530 |
|
nm |
| ASE Power |
PASE |
If=180mA,Tc=25℃ |
|
1 |
|
dBm |
| ASE Ripple |
Ripple |
If=180mA,Tc=25℃ |
|
0.5 |
2 |
dB |
| Emission Angle |
θR |
|
|
20 |
|
° |
| Vertical Divergence Angle |
θt |
--- |
--- |
24.9 |
|
° |
| Horizontal Divergence Angle |
θp |
--- |
--- |
16.7 |
|
° |
| AR (Anti-Reflection) Reflectivity |
RANG |
|
|
0.01 |
|
% |
| HR (High-Reflection) Reflectivity |
RNOR |
|
|
95 |
|
% |
| Operating Temperature |
TC |
I=Iop |
|
25 |
40 |
°C |
| Storage Temperature |
Tstg |
-40 |
|
--- |
85 |
°C |
| Size |
|
1000*500*140(±20) |
|
|
|
μm |