FQP33N10 MOSFET Power Electronics – High Power Switching Capability Low On-Resistance and Fast Switching Times
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 16.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V | |
| Vgs (Max) | ±25V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 127W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | TO-220-3 | |
| Package / Case |
Product Listing: ON Semiconductor FQP33N10 Power MOSFET
Product Features:
• Low RDS(ON) - 0.0043 Ohm
• Low Gate Charge - 9.8 nC
• Low Gate-Source Voltage - 1.8V
• Low On-State Resistance - 0.0043 Ohm
• High Speed Switching - 175V/nS
• High Current Capability - 10A
• Low Threshold Voltage - 1.2V
• Low Input Capacitance - 12 pF
• Low Output Capacitance - 9 pF
• High Avalanche Energy - 78 mJ
• High Peak Current - 30A
• Low EMI - 5dB
