BSC072N08NS5ATMA1 MOSFET Power Electronics N-Channel OptiMOSTM5 Power-Transistor 80V
|   			 FET Type   			 |   			  			 |   		|
|   			 Technology   			 |   			  			 MOSFET (Metal Oxide)   			 |   			  			 |   		
|   			 Drain to Source Voltage (Vdss)   			 |   			  			 |   		|
|   			 Current - Continuous Drain (Id) @ 25°C   			 |   			  			 |   		|
|   			 Drive Voltage (Max Rds On, Min Rds On)   			 |   			  			 6V, 10V   			 |   			  			 |   		
|   			 Rds On (Max) @ Id, Vgs   			 |   			  			 7.2mOhm @ 37A, 10V   			 |   			  			 |   		
|   			 Vgs(th) (Max) @ Id   			 |   			  			 3.8V @ 36µA   			 |   			  			 |   		
|   			 Gate Charge (Qg) (Max) @ Vgs   			 |   			  			 29 nC @ 10 V   			 |   			  			 |   		
|   			 Vgs (Max)   			 |   			  			 ±20V   			 |   			  			 |   		
|   			 Input Capacitance (Ciss) (Max) @ Vds   			 |   			  			 2100 pF @ 40 V   			 |   			  			 |   		
|   			 FET Feature   			 |   			  			 -   			 |   			  			 |   		
|   			 Power Dissipation (Max)   			 |   			  			 2.5W (Ta), 69W (Tc)   			 |   			  			 |   		
|   			 Operating Temperature   			 |   			  			 -55°C ~ 150°C (TJ)   			 |   			  			 |   		
|   			 Mounting Type   			 |   			  			 |   		|
|   			 Supplier Device Package   			 |   			  			 PG-TDSON-8-7   			 |   			  			 |   		
|   			 Package / Case   			 |   			
Features
  •OptimizedforhighperformanceSMPS,e.g.sync.rec.
  •100%avalanchetested
  •Superiorthermalresistance
  •N-channel
  •QualifiedaccordingtoJEDEC1)fortargetapplications
  •Pb-freeleadplating;RoHScompliant
  •Halogen-freeaccordingtoIEC61249-2-21
