NTD20N03L27T4G MOSFET Power Electronics 20 A 30 V N−Channel DPAK logic level vertical
N-Channel PowerTrench
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V | |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 10A, 5V | |
| Vgs(th) (Max) @ Id | 2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 18.9 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.75W (Ta), 74W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | DPAK | |
| Package / Case |
This logic level vertical power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in.
The drain−to−source diode has a ideal fast but soft recovery.
Features
• Ultra−Low RDS(on), Single Base, Advanced Technology
• SPICE Parameters Available
• Diode is Characterized for use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperatures
• High Avalanche Energy Specified
• ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Power Supplies
• Inductive Loads
• PWM Motor Controls
• Replaces MTD20N03L in many Applications
