| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 3.41mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1683 pF @ 15 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.55W (Ta), 30.5W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) | |
| Package / Case |
Product Listing:
Product Name: NTMFS4C025NT1G
Manufacturer: ON Semiconductor
Product Type: MOSFET Power Electronics
Parameters:
• Drain-Source Voltage (Vdss): 25V
• Gate-Source Voltage (Vgs): 20V
• Drain Current (Id): 4A
• Static Drain-Source On-Resistance (Rds): 0.0055ohm
• Power Dissipation (Pd): 2.25W
• Operating Temperature Range: -55°C to +150°C
• Mounting: SMD/SMT
