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FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications
FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications
Specifications
Brand Name :
onsemi
Model Number :
FDD3672
Place of Origin :
original
MOQ :
1
Price :
Negotiable
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability :
999999
Delivery Time :
1-3 days
Packaging Details :
standard
Drain to Source Voltage (Vdss) :
100 V
Current - Continuous Drain (Id) @ 25°C :
6.5A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs :
28mOhm @ 44A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
36 nC @ 10 V
Vgs (Max) :
±20V
Description

FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications

FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
28mOhm @ 44A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1710 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
135W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Product Listing:

ON Semiconductor FDD3672 - N-Channel Power MOSFET

The FDD3672 is a N-Channel power MOSFET manufactured by ON Semiconductor. It offers excellent power dissipation, low gate charge and fast switching speed.

Features:
• 100V drain-source breakdown voltage
• Maximum continuous drain current of 10.2A
• Low gate charge: Qg = 16nC typical
• Maximum drain-source on-state resistance of 0.48Ω
• Internal avalanche energy rated at EAS = 7.3mJ
• Maximum operating junction temperature of 175°C
• Average gate charge: Qg = 16nC typical
• Fast switching speed: tD(on) = 10ns typical
• Lead-free, RoHS-compliant package

Why buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.

How to buy >>>
• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.

Service >>>
• Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.

FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications

Product tags

mosfet power transistor com

,

mosfet power transistor

,

high power igbt
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FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications

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Product Detail
Brand Name :
onsemi
Model Number :
FDD3672
Place of Origin :
original
MOQ :
1
Price :
Negotiable
Payment Terms :
L/C, D/A, D/P, T/T, Western Union, MoneyGram
Contact Supplier
FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications

Shenzhen Sai Collie Technology Co., Ltd.

Active Member
3 Years
shenzhen
Since 2007
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer, Exporter, Trading Company, Seller, Other
Main Products :
Semiconductor IC Chip, Programmable IC Chip, Integrated Circuit IC Chip
Total Annual :
300 million-400 million
Employee Number :
100~150
Certification Level :
Active Member
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