2N7002H6327XTSA2 MOSFET Power Electronics N-channel OptiMOS™ Small-Signal-Transistor Package SOT23
| FET Type | | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 20 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 500mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | PG-SOT23 | |
| Package / Case |
Features
• N-channel
• Enhancement mode
• Logic level
• Avalanche rated
• fast switching
• Pb-free lead-plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
