| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 24A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 15 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | | |
| Supplier Device Package | 8-PQFN (5x6) | |
| Package / Case |
Product Listing:
FDMS8025S N-Channel Enhancement Mode MOSFET
Manufacturer: ON Semiconductor
Parameters:
• Drain-Source Voltage: -20V
• Continuous Drain Current: -25A
• RDS (on): -25 mOhm
• Power Dissipation: -60W
• Operating Temperature: -55°C to +150°C
• Packaging: -TO-263
