Specifications
Description :
JFETs RoHS
Mfr. Part # :
IPP60R380C6XKSA1
Model Number :
IPP60R380C6XKSA1
Description

Product Overview

The CoolMOS C6 600V Power Transistor, specifically the IPx60R380C6 model, offers advanced performance for power management applications. It is designed for high efficiency and reliability, featuring a robust construction that is Pb-free and Halogen-free. This transistor is fully qualified according to JEDEC standards for industrial applications, making it suitable for a wide range of demanding use cases.

Product Attributes

  • Brand: Infineon
  • Product Line: CoolMOS C6
  • Technology: Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
  • Plating: Pb-free
  • Material: Halogen free
  • Qualification: Fully qualified according to JEDEC for Industrial Applications

Technical Specifications

Model Voltage Rating Description
IPx60R380C6 600V CoolMOS C6 Power Transistor

Technical Specifications

Part Number Package Description
IPB60R380C6 PG-TO263 CoolMOS C6 Power Transistor
IHW60R380C6 PG-TO247 CoolMOS C6 Power Transistor
IPI60R380C6 PG-TO220 FullPAK CoolMOS C6 Power Transistor
IPI60R380C6 PG-TO220 FullPAK CoolMOS C6 Power Transistor

Technical Specifications

Parameter Symbol Value Unit Condition
Drain-source voltage VDS 600 V
Continuous drain current ID 16.5 A TC = 25C
Pulsed drain current ID,pulse 50 A
Gate-source voltage VGS ±20 V
Continuous drain current ID 16.5 A TC = 25C
Continuous drain current ID 10.5 A TC = 100C
Pulsed drain current ID,pulse 50 A
Gate-source voltage VGS ±20 V
Avalanche energy, single pulse EAS 165 mJ ID = 16.5A, VDD = 50V
Avalanche current, repetitive IAR 16.5 A
Avalanche energy, repetitive EAR 165 mJ
Repetitive avalanche current IAR 16.5 A
Repetitive avalanche energy EAR 165 mJ
Drain-source on-resistance RDS(on) 0.38 Ω VGS = 10V, ID = 8.25A
Threshold voltage Vth 2.5 V ID = 1mA
Gate charge Qg 53 nC VGS = 10V
Input capacitance Ciss 1250 pF VGS = 0V, f = 1MHz
Output capacitance Coss 120 pF VGS = 0V, f = 1MHz
Reverse transfer capacitance Crss 15 pF VGS = 0V, f = 1MHz
Total gate charge Qg 53 nC VGS = 10V
Input capacitance Ciss 1250 pF VGS = 0V, f = 1MHz
Output capacitance Coss 120 pF VGS = 0V, f = 1MHz
Reverse transfer capacitance Crss 15 pF VGS = 0V, f = 1MHz
Maximum Junction Temperature Tj,max 150 C
Storage Temperature Tstg -55 to 150 C
Thermal Resistance, Junction-to-Case RthJC 0.6 K/W
Thermal Resistance, Junction-to-Ambient RthJA 62 K/W
ESD capability VESD 2 kV Human Body Model (HBM)
ESD capability VESD 200 V Charged Device Model (CDM)
Package Thermal Resistance RthJC 0.6 K/W
Package Thermal Resistance RthJA 62 K/W

Technical Specifications

Model Package Outline
IPB60R380C6 PG-TO263 TO-263
IHW60R380C6 PG-TO247 TO-247
IPI60R380C6 PG-TO220 FullPAK TO-220 FullPAK

Technical Specifications

Outline Dimension Value (mm)
PG-TO220 FullPAK A 15.85
A1 2.54
b 1.02
b1 2.54
b2 1.78
b3 1.15
b4 2.41
c 0.64
c2 0.89
D 15.67
D1 13.75
E 10.00
E1 7.50
e 2.54
e1 5.02
PG-TO220 FullPAK H 28.70
L 16.15
L1 10.65
P 3.50
Q 2.85
L3 1.27
L4 4.57
A2 2.54
c2 0.89
b2 1.78
b3 1.15
b4 2.41
c 0.64
D 15.67
D1 13.75
PG-TO220 FullPAK E 10.00
E1 7.50
e 2.54
e1 5.02
H 28.70
L 16.15
L1 10.65
P 3.50
Q 2.85
L3 1.27
L4 4.57
A2 2.54
c2 0.89
b2 1.78
b3 1.15
PG-TO220 FullPAK b4 2.41
c 0.64
D 15.67
D1 13.75
E 10.00
E1 7.50
e 2.54
e1 5.02
H 28.70
L 16.15
L1 10.65
P 3.50
Q 2.85
L3 1.27
L4 4.57

2410301807_Infineon-IPP60R380C6XKSA1_C21102538.pdf

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CoolMOS C6 600V Power Transistor Infineon IPP60R380C6XKSA1 Metal Oxide Semiconductor Fully Qualified

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Description :
JFETs RoHS
Mfr. Part # :
IPP60R380C6XKSA1
Model Number :
IPP60R380C6XKSA1
Contact Supplier
CoolMOS C6 600V Power Transistor Infineon IPP60R380C6XKSA1 Metal Oxide Semiconductor Fully Qualified
CoolMOS C6 600V Power Transistor Infineon IPP60R380C6XKSA1 Metal Oxide Semiconductor Fully Qualified

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier

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