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Low level analog switching device onsemi J112 N channel switch Pb free with interchangeable source and drain terminals
Low level analog switching device onsemi J112 N channel switch Pb free with interchangeable source and drain terminals
Specifications
Operating Temperature :
-55℃~+150℃@(Tj)
Pd - Power Dissipation :
625mW
Drain Current (Idss) :
5mA@15V
FET Type :
-
RDS(on) :
50Ω
Gate-Source Breakdown Voltage (Vgss) :
35V
Gate-Source Cutoff Voltage (VGS(off)) :
1V@1uA
Description :
625mW 5mA@15V 50Ω 35V TO-92-3L JFETs RoHS
Mfr. Part # :
J112
Model Number :
J112
Package :
TO-92-3L
Description

Product Overview

The J111, J112, J113, MMBFJ111, MMBFJ112, and MMBFJ113 are N-Channel switches designed for low-level analog switching, sample and hold circuits, and chopper-stabilized amplifiers. These devices are sourced from Process 51, and their source and drain terminals are interchangeable. They are available as Pb-Free devices.

Product Attributes

  • Brand: ON Semiconductor
  • Origin: Sourced from Process 51
  • Interchangeable Terminals: Source & Drain
  • Certifications: PbFree devices

Technical Specifications

ModelParameterValueUnit
J111 / J112 / J113Total Device Dissipation (PD)625mW
Derate Above 25C5.0mW/C
Thermal Resistance, JunctiontoCase (R JC)125C/W
Thermal Resistance, JunctiontoAmbient (R JA)200C/W
GateSource Breakdown Voltage (V(BR)GSS) @ IG = 1.0 A, VDS = 035V
Gate Reverse Current (IGSS) @ VGS = 15 V, VDS = 01.0nA
GateSource CutOff Voltage (VGS(off)) @ VDS = 5 V, ID = 1.0 mAJ111: 3.0 to 10.0 V
J112: 1.0 to 5.0 V
J113: 0.5 to 3.0 V		V
MMBFJ111 / MMBFJ112 / MMBFJ113Total Device Dissipation (PD)350mW
Derate Above 25C2.8mW/C
Thermal Resistance, JunctiontoAmbient (R JA)357C/W
GateSource Breakdown Voltage (V(BR)GSS) @ IG = 1.0 A, VDS = 035V
Gate Reverse Current (IGSS) @ VGS = 15 V, VDS = 01.0nA
GateSource CutOff Voltage (VGS(off)) @ VDS = 5 V, ID = 1.0 mAJ111: 3.0 to 10.0 V
J112: 1.0 to 5.0 V
J113: 0.5 to 3.0 V		V
All ModelsDrain Cutoff Leakage Current (ID(off)) @ VDS = 5.0 V, VGS = 10 V1.0nA
ZeroGate Voltage Drain Current (IDSS) @ VDS = 15 V, VGS = 0J111: 20 mA
J112: 5.0 mA
J113: 2.0 mA		mA
DrainSource On Resistance (rDS(on)) @ VDS 0.1 V, VGS = 0J111: 30
J112: 50
J113: 100
DrainGate & SourceGate On Capacitance (Cdg(on), Csg(on)) @ VDS = 0, VGS = 0, f = 1.0 MHz28pF
DrainGate Off Capacitance (Cdg(off)) @ VDS = 0, VGS = 10 V, f = 1.0 MHz5.0pF
SourceGate Off Capacitance (Csg(off)) @ VDS = 0, VGS = 10 V, f = 1.0 MHz5.0pF
Forward Gate Current (IGF)50mA
Operating and Storage Junction Temperature Range (TJ, TSTG)55 to 150C
DrainGate Voltage (VDG)35V
GateSource Voltage (VGS)35V

2410121853_onsemi-J112_C719815.pdf

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Low level analog switching device onsemi J112 N channel switch Pb free with interchangeable source and drain terminals

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Product Detail
Operating Temperature :
-55℃~+150℃@(Tj)
Pd - Power Dissipation :
625mW
Drain Current (Idss) :
5mA@15V
FET Type :
-
RDS(on) :
50Ω
Gate-Source Breakdown Voltage (Vgss) :
35V
Contact Supplier
Low level analog switching device onsemi J112 N channel switch Pb free with interchangeable source and drain terminals

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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