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Automotive grade P Channel depletion mode JFET onsemi MMBFJ175LT1G with AEC Q101 certification and RoHS compliance
Automotive grade P Channel depletion mode JFET onsemi MMBFJ175LT1G with AEC Q101 certification and RoHS compliance
Specifications
Ciss-Input Capacitance :
11pF@10V
Operating Temperature :
-55℃~+150℃@(Tj)
Pd - Power Dissipation :
225mW
Drain Current (Idss) :
7mA@15V
FET Type :
-
RDS(on) :
125Ω
Gate-Source Breakdown Voltage (Vgss) :
30V
Gate-Source Cutoff Voltage (VGS(off)) :
3V@10nA
Description :
225mW 7mA@15V 125Ω 30V SOT-23 JFETs RoHS
Mfr. Part # :
MMBFJ175LT1G
Model Number :
MMBFJ175LT1G
Package :
SOT-23
Description

Product Overview

The MMBFJ175LT1 is a P-Channel, depletion-mode JFET chopper designed for automotive and other applications requiring unique site and control change requirements. These devices are AEC-Q101 qualified and PPAP capable, featuring Pb-Free, Halogen Free/BFR Free, and RoHS compliance.

Product Attributes

  • Brand: Semiconductor Components Industries, LLC (dba ON Semiconductor)
  • Certifications: AEC-Q101 Qualified, PPAP Capable, RoHS Compliant
  • Material: Pb-Free, Halogen Free/BFR Free
  • Origin: USA/Canada (implied by support contact information)

Technical Specifications

CharacteristicSymbolValueUnitNotes
MAXIMUM RATINGS
DrainGate VoltageVDG25V
Reverse GateSource VoltageVGS(r)25V
THERMAL CHARACTERISTICS
Total Device Dissipation FR5 BoardPD225mWTA = 25C; Derate above 25C: 1.8 mW/C
Thermal Resistance, JunctiontoAmbientR JA556C/W
Junction and Storage TemperatureTJ, Tstg55 to +150C
OFF CHARACTERISTICS
GateSource Breakdown VoltageV(BR)GSS30VDS = 0, ID = 1.0 mA
Gate Reverse CurrentIGSS1.0nAVDS = 0 V, VGS = 20 V
GateSource Cutoff VoltageVGS(OFF)3.06.0VVDS = 15, ID = 10 nA
ON CHARACTERISTICS
Zero GateVoltage Drain CurrentIDSS7.060mAVGS = 0, VDS = 15 V (Note 2)
Drain Cutoff CurrentID(off)1.0nAVDS = 15 V, VGS = 10 V
Drain Source On ResistancerDS(on)125ID = 500 A
Input CapacitanceCiss11pFVDS = 0, VGS = 10V, f = 1.0 MHz
Reverse Transfer CapacitanceCrss5.5pF

Notes:
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.


2410010302_onsemi-MMBFJ175LT1G_C133304.pdf

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Automotive grade P Channel depletion mode JFET onsemi MMBFJ175LT1G with AEC Q101 certification and RoHS compliance

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Product Detail
Ciss-Input Capacitance :
11pF@10V
Operating Temperature :
-55℃~+150℃@(Tj)
Pd - Power Dissipation :
225mW
Drain Current (Idss) :
7mA@15V
FET Type :
-
RDS(on) :
125Ω
Contact Supplier
Automotive grade P Channel depletion mode JFET onsemi MMBFJ175LT1G with AEC Q101 certification and RoHS compliance

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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