The TF412S is an N-Channel JFET designed for low-frequency general-purpose amplification, impedance conversion, and infrared sensor applications. Its ultrasmall SOT-883 package facilitates miniaturization in end products. Key features include low IGSS (max 1.0nA) and low Ciss (typ 4pF), contributing to efficient circuit design. This device is halogen-free compliant and offers ESD immunity < 200V (Machine Model).
| Parameter | Symbol | Conditions | Value | Unit | ||||
| Drain-to-Source Breakdown Voltage | V(BR)GDS | IG = 10A, VDS=0V | 30 | V | ||||
| Gate-to-Source Leakage Current | IGSS | VGS = 20V, VDS=0V | 1.0 | nA | ||||
| Cutoff Voltage | VGS(off) | VDS = 10V, ID = 1A | 0.18 | 0.80 | 1.5 | V | ||
| Drain Current | IDSS | VDS = 10V, VGS = 0V | 1.2 | 3.0 | mA | |||
| Forward Transfer Admittance | | yfs | | VDS = 10V, VGS=0V, f = 1kHz | 3.0 | 5.0 | mS | |||
| Input Capacitance | Ciss | VDS = 10V, VGS = 0V, f = 1MHz | 4 | pF | ||||
| Reverse Transfer Capacitance | Crss | VDS = 10V, VGS = 0V, f = 1MHz | 1.1 | pF |