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N Channel RF Amplifier onsemi BF256B Featuring Gate Source Breakdown Voltage for Amplifier Circuits
N Channel RF Amplifier onsemi BF256B Featuring Gate Source Breakdown Voltage for Amplifier Circuits
Specifications
Ciss-Input Capacitance :
-
Operating Temperature :
-55℃~+150℃
FET Type :
1 N-channel
Pd - Power Dissipation :
350mW
Drain Current (Idss) :
-
RDS(on) :
-
Gate-Source Breakdown Voltage (Vgss) :
-
Gate-Source Cutoff Voltage (VGS(off)) :
500mV@10nA
Description :
1 N-channel 350mW TO-92-3 JFETs RoHS
Mfr. Part # :
BF256B
Model Number :
BF256B
Package :
TO-92-3
Description

ON Semiconductor BF256B N-Channel RF Amplifiers

The BF256B is an N-Channel RF Amplifier designed for VHF/UHF applications. Sourced from process 50, this device offers reliable performance for amplifier circuits.

Product Attributes

  • Brand: ON Semiconductor (formerly Fairchild Semiconductor)
  • Product Type: N-Channel RF Amplifier
  • Part Number: BF256B
  • Top Mark: BF256B
  • Package: TO-92 3L
  • Origin: Sourced from process 50

Technical Specifications

Parameter Conditions Min. Max. Unit
Gate-Source Breakdown Voltage (V(BR)GSS) VDS = 0, IG = 1 A -30 V
Gate-Source Voltage (VGS) VDS = 15 V, ID = 200 A -0.5 -7.5 V
Gate-Source Cut-Off Voltage (VGS(off)) VDS = 15 V, ID = 10 nA -0.5 -8.0 V
Gate Reverse Current (IGSS) VGS = -20 V, VDS = 0 -5 nA
Zero-Gate Voltage Drain Current (IDSS) VDS = 15 V, VGS = 0 6 13 mA
Common Source Forward Transconductance (gfs) VDS = 15 V, VGS = 0, f= 1 kHz 4.5 mmhos
Drain-Gate Voltage (VDG) 30 V
Gate-Source Voltage (VGS) -30 V
Forward Gate Current (IGF) 10 mA
Operating and Storage Temperature Range (TJ, TSTG) -55 150 C
Total Device Dissipation (PD) at TA = 25C 350 mW
Derate Above 25C 2.8 mW/C

Note: Part numbers containing underscores (_) from Fairchild may have been updated to dashes (-) to comply with ON Semiconductor's system requirements. Please verify updated device numbers on the ON Semiconductor website.


2411272026_onsemi-BF256B_C2892081.pdf

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N Channel RF Amplifier onsemi BF256B Featuring Gate Source Breakdown Voltage for Amplifier Circuits

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Product Detail
Ciss-Input Capacitance :
-
Operating Temperature :
-55℃~+150℃
FET Type :
1 N-channel
Pd - Power Dissipation :
350mW
Drain Current (Idss) :
-
RDS(on) :
-
Contact Supplier
N Channel RF Amplifier onsemi BF256B Featuring Gate Source Breakdown Voltage for Amplifier Circuits

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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