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Compact n channel jfet onsemi NSVJ3910SB3T1G with high breakdown voltage and Pb free RoHS compliance
Compact n channel jfet onsemi NSVJ3910SB3T1G with high breakdown voltage and Pb free RoHS compliance
Specifications
Ciss-Input Capacitance :
6pF@5V
Operating Temperature :
-55℃~+150℃
Pd - Power Dissipation :
400mW
FET Type :
1 N-channel
Drain Current (Idss) :
20mA@5V
Gate-Source Breakdown Voltage (Vgss) :
25V
Gate-Source Cutoff Voltage (VGS(off)) :
600mV@100uA
Description :
400mW 1 N-channel 20mA@5V 25V CPH-3 JFETs RoHS
Mfr. Part # :
NSVJ3910SB3T1G
Model Number :
NSVJ3910SB3T1G
Package :
CPH-3
Description

NSVJ3910SB3 N-Channel JFET

The NSVJ3910SB3 is an N-Channel JFET designed for compact and efficient automotive applications, offering high gain performance. It is AEC-Q101 qualified and PPAP capable, making it suitable for demanding automotive environments. This JFET features high forward transfer admittance, high breakdown voltage, low input capacitance, and low noise figure, with Pb-Free and RoHS compliance.

Product Attributes

  • Brand: onsemi
  • Certifications: AEC-Q101 qualified, PPAP capable
  • Compliance: Pb-Free and RoHS compliance

Technical Specifications

Parameter Symbol Conditions Value Unit
Drain-to-Source Voltage VDSX 25 V
Gate-to-Drain Voltage VGDS -25 V
Gate Current IG 10 mA
Drain Current ID 50 mA
Allowable Power Dissipation PD Ta = 25C 400 mW
Operating Junction and Storage Temperature TJ, Tstg -55 to +150 C
Gate-to-Drain Breakdown Voltage V(BR)GDS IG = -10A, VDS = 0V -25 V
Gate Cutoff Current IGSS VGS = -10V, VDS = 0V -1.0 nA
Cutoff Voltage VGS(off) VDS = 5V, ID = 100A -0.6 to -1.8 V
Drain Current IDSS VDS = 5V, VGS = 0V 20 to 40 mA
Forward Transfer Admittance | yfs | VDS = 5V, VGS = 0V, f = 1kHz 30 to 40 mS
Input Capacitance Ciss VDS = 5V, VGS = 0V, f = 1MHz 6.0 pF
Reverse Transfer Capacitance Crss VDS = 5V, VGS = 0V, f = 1MHz 2.3 pF
Noise Figure NF VDS = 5V, VGS = 0V, f = 100MHz 2.1 to 2.8 dB

Ordering Information

Device Marking Package Shipping
J2 CPH3 (Pb-Free) 3,000 / Tape & Reel

2410121745_onsemi-NSVJ3910SB3T1G_C604374.pdf

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Compact n channel jfet onsemi NSVJ3910SB3T1G with high breakdown voltage and Pb free RoHS compliance

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Product Detail
Ciss-Input Capacitance :
6pF@5V
Operating Temperature :
-55℃~+150℃
Pd - Power Dissipation :
400mW
FET Type :
1 N-channel
Drain Current (Idss) :
20mA@5V
Gate-Source Breakdown Voltage (Vgss) :
25V
Contact Supplier
Compact n channel jfet onsemi NSVJ3910SB3T1G with high breakdown voltage and Pb free RoHS compliance

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Single FETs, MOSFETs, Bridge Rectifiers, Single Bipolar Transistors
Employee Number :
300~500
Certification Level :
Verified Supplier
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