Specifications
Ciss-Input Capacitance :
11pF@10V
Operating Temperature :
-55℃~+150℃@(Tj)
Pd - Power Dissipation :
225mW
Drain Current (Idss) :
1.5mA@15V
FET Type :
-
RDS(on) :
300Ω
Gate-Source Breakdown Voltage (Vgss) :
30V
Gate-Source Cutoff Voltage (VGS(off)) :
800mV@10nA
Description :
225mW 1.5mA@15V 300Ω 30V SOT-23 JFETs RoHS
Mfr. Part # :
MMBFJ177LT1G
Model Number :
MMBFJ177LT1G
Package :
SOT-23
Description

Product Overview

The MMBFJ177LT1G and SMMBFJ177LT1G are P-Channel depletion mode JFET chopper transistors designed for various applications. The 'S' prefix denotes suitability for automotive and other applications with unique site and control change requirements, offering AEC-Q101 qualification and PPAP capability. These devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

Product Attributes

  • Brand: ON Semiconductor
  • Certifications: AEC-Q101 Qualified (for 'S' prefix), PPAP Capable (for 'S' prefix)
  • Compliance: PbFree, Halogen Free/BFR Free, RoHS Compliant
  • Package: SOT-23 (TO-236)

Technical Specifications

Part NumberVDG (Max)VGS (Max)IGSS (Max)VGS(off) (V)IDSS (Max)rDS(on) (Max)Ciss (Max)Crss (Max)
MMBFJ177LT1G / SMMBFJ177LT1G-25 Vdc25 Vdc1.0 nAdc0.8 - 2.5-20 mAdc30011 pF5.5 pF

2410010301_onsemi-MMBFJ177LT1G_C106763.pdf

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SOT 23 packaged P Channel JFET transistor onsemi MMBFJ177LT1G offering Pb Free and RoHS compliant features

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Ciss-Input Capacitance :
11pF@10V
Operating Temperature :
-55℃~+150℃@(Tj)
Pd - Power Dissipation :
225mW
Drain Current (Idss) :
1.5mA@15V
FET Type :
-
RDS(on) :
300Ω
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SOT 23 packaged P Channel JFET transistor onsemi MMBFJ177LT1G offering Pb Free and RoHS compliant features

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Employee Number :
300~500
Certification Level :
Verified Supplier

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