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SiC FET Device with 23 Milli Ohm On Resistance onsemi UF4SC120023B7S Featuring Cascode Configuration
SiC FET Device with 23 Milli Ohm On Resistance onsemi UF4SC120023B7S Featuring Cascode Configuration
SiC FET Device with 23 Milli Ohm On Resistance onsemi UF4SC120023B7S Featuring Cascode Configuration
SiC FET Device with 23 Milli Ohm On Resistance onsemi UF4SC120023B7S Featuring Cascode Configuration
Specifications
Description :
TO-263-7 JFETs RoHS
Mfr. Part # :
UF4SC120023B7S
Model Number :
UF4SC120023B7S
Package :
TO-263-7
Description

Product Overview

The UF4SC120023B7S is a 1200 V, 23 m SiC FET featuring a cascode configuration of a normally-on SiC JFET and a Si MOSFET, resulting in a normally-off SiC FET. Its standard gate-drive characteristics allow for direct replacement of Si IGBTs, Si superjunction devices, or SiC MOSFETs with minimal redesign. Available in a space-saving TO-263-7 package, it offers ultra-low gate charge and exceptional reverse recovery, making it ideal for switching inductive loads and applications requiring standard gate drive.

Product Attributes

  • Brand: onsemi
  • Material: Silicon Carbide (SiC)
  • Certifications: Pb-Free, Halogen Free, RoHS Compliant
  • Package: TO-263-7

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
MAXIMUM RATINGS
Drain-source VoltageVDS1200V
Gate-source VoltageVGSDC-20+20V
Gate-source VoltageVGSAC (f > 1 Hz)-25+25V
Continuous Drain Current (Note 1)IDTC = 25 C70A
Continuous Drain Current (Note 1)IDTC = 100 C51A
Pulsed Drain Current (Note 2)IDMTC = 25 C204A
Single Pulsed Avalanche Energy (Note 3)EASL = 15 mH, IAS = 4.1 A126mJ
SiC FET dv/dt Ruggednessdv/dtVDS 800 V150V/ns
Power DissipationPtotTC = 25 C385W
Maximum Junction TemperatureTJ, max175C
Operating and Storage TemperatureTJ, TSTG-55175C
Reflow Soldering TemperatureTsolderReflow MSL 1245C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-CaseR JC0.30.39C/W
ELECTRICAL CHARACTERISTICS (TJ = +25 C unless otherwise specified)
Drain-source Breakdown VoltageBVDSVGS = 0 V, ID = 1 mA1200V
Total Drain Leakage CurrentIDSSVDS = 1200 V, VGS = 0 V, TJ = 25 C260A
Total Drain Leakage CurrentIDSSVDS = 1200 V, VGS = 0 V, TJ = 175C20A
Total Gate Leakage CurrentIGSSVDS = 0 V, TJ = 25 C, VGS = -20 V / +20 V-620nA
Drain-source On-resistanceRDS(on)VGS = 12 V, ID = 40 A, TJ = 25C2330m
Drain-source On-resistanceRDS(on)VGS = 12 V, ID = 40 A, TJ = 125C42m
Drain-source On-resistanceRDS(on)VGS = 12 V, ID = 40 A, TJ = 175C62m
Gate Threshold VoltageVG(th)VDS = 5 V, ID = 10 mA44.86V
Gate ResistanceRGf = 1 MHz, open drain4.5
REVERSE DIODE
Diode Continuous Forward Current (Note 1)ISTC = 25 C70A
Diode Pulse Current (Note 2)IS, pulseTC = 25 C204A
Forward VoltageVFSDVGS = 0 V, IS = 20 A, TJ = 25 C1.21.35V
Forward VoltageVFSDVGS = 0 V, IS = 20 A, TJ = 175 C1.65V
Reverse Recovery ChargeQrrVDS = 800 V, IS = 40 A, VGS = -5 V, RG = 50 , di/dt = 2000 A/ s, TJ = 25 C243nC
Reverse Recovery TimetrrVDS = 800 V, IS = 40 A, VGS = -5 V, RG = 50 , di/dt = 2000 A/ s, TJ = 25 C26.8ns
Reverse Recovery ChargeQrrVDS = 800 V, IS = 40 A, VGS = -5 V, RG = 50 , di/dt = 2000 A/ s, TJ = 150 C264nC
Reverse Recovery TimetrrVDS = 800 V, IS = 40 A, VGS = -5 V, RG = 50 , di/dt = 2000 A/ s, TJ = 150 C28.8ns
DYNAMIC
Input CapacitanceCissVDS = 800 V, VGS = 0 V, f = 100 kHz1430pF
Output CapacitanceCoss85pF
Reverse Transfer CapacitanceCrss2pF
Effective Output Capacitance, Energy RelatedCoss(er)VDS = 0 V to 800 V, VGS = 0 V108pF
Effective Output Capacitance, Time RelatedCoss(tr)200pF
COSS Stored EnergyEossVDS = 800 V, VGS = 0 V35J
Total Gate ChargeQGVDS = 800 V, ID = 40 A, VGS = 0 V to 15 V37.8nC
Gate-drain ChargeQGD8
Gate-source ChargeQGS11.8
Turn-on Delay Timetd(on)VDS = 800 V, ID = 40 A, Gate Driver = -5 V to +15 V, RG_ON = 10 , RG_OFF = 20 , Inductive Load, FWD: Same Device with VGS = -5 V and RG = 20 , Device Snubber: RS = 10 , CS = 100 pF TJ = 25 C (Note 4), (Note 5)23ns
Rise Timetr25ns
Turn-off Delay Timetd(off)64ns
Fall Timetf10ns
Turn-on Energy Including RS EnergyEON719J
Turn-off Energy Including RS EnergyEOFF95J
Total Switching EnergyETOTAL814J
Snubber RS Energy During Turn-onERS_ON8J
Snubber RS Energy During Turn-offERS_OFF15J
Turn-on Delay Timetd(on)VDS = 800 V, ID = 40 A, Gate Driver = -5 V to +15 V, RG_ON = 10 , RG_OFF = 20 , Inductive Load, FWD: Same Device with VGS = -5 V and RG = 20 , Device Snubber: RS = 10 , CS = 100 pF TJ = 150 C (Note 4), (Note 5)21ns
Rise Timetr27ns
Turn-off Delay Timetd(off)63ns
Fall Timetf10ns
Turn-on Energy Including RS EnergyEON781J
Turn-off Energy Including RS EnergyEOFF111J
Total Switching EnergyETOTAL892J
Snubber RS Energy During Turn-onERS_ON11J
Snubber RS Energy During Turn-offERS_OFF15J

2512301019_onsemi-UF4SC120023B7S_C44870454.pdf

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SiC FET Device with 23 Milli Ohm On Resistance onsemi UF4SC120023B7S Featuring Cascode Configuration

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Product Detail
Description :
TO-263-7 JFETs RoHS
Mfr. Part # :
UF4SC120023B7S
Model Number :
UF4SC120023B7S
Package :
TO-263-7
Contact Supplier
SiC FET Device with 23 Milli Ohm On Resistance onsemi UF4SC120023B7S Featuring Cascode Configuration
SiC FET Device with 23 Milli Ohm On Resistance onsemi UF4SC120023B7S Featuring Cascode Configuration

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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