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onsemi J109 D26Z Low On Resistance N Channel JFET for Digital Switching Applications Pb Free Device
onsemi J109 D26Z Low On Resistance N Channel JFET for Digital Switching Applications Pb Free Device
Specifications
Ciss-Input Capacitance :
-
Operating Temperature :
-55℃~+150℃@(Tj)
Pd - Power Dissipation :
625mW
Drain Current (Idss) :
40mA@15V
FET Type :
-
RDS(on) :
12Ω
Gate-Source Breakdown Voltage (Vgss) :
25V
Gate-Source Cutoff Voltage (VGS(off)) :
2V@10nA
Description :
625mW 40mA@15V 12Ω 25V TO-92-3L JFETs RoHS
Mfr. Part # :
J109-D26Z
Model Number :
J109-D26Z
Package :
TO-92-3L
Description

Product Overview

The J109 and MMBFJ108 are N-Channel JFETs designed for digital switching applications requiring very low on-resistance. Sourced from Process 58, these devices are Pb-Free.

Product Attributes

  • Brand: ON Semiconductor
  • Origin: Sourced from Process 58
  • Certifications: Pb-Free Devices

Technical Specifications

ParameterSymbolJ109MMBFJ108UnitNotes
MAXIMUM RATINGS
DrainGate VoltageVDG25V
GateSource VoltageVGS25V
Forward Gate CurrentIGF10mA
Operating and Storage Junction Temperature RangeTJ, TSTG55 to 150C
THERMAL CHARACTERISTICS
Total Device DissipationPD625350mWTA = 25C
Derate Above 25C5.02.8mW/C
Thermal Resistance, JunctiontoCaseR JC125C/WNote 3
Thermal Resistance, JunctiontoAmbientR JA200357C/WNote 4
ELECTRICAL CHARACTERISTICS
GateSource Breakdown VoltageV(BR)GSS25VIG = 10 A, VDS = 0
Gate Reverse CurrentIGSS3.0nAVGS = 15 V, VDS = 0, TA = 25C
Gate Reverse CurrentIGSS200nAVGS = 15 V, VDS = 0, TA = 100C
GateSource CutOff VoltageVGS(off)2.0 to 6.03.0 to 10.0VVDS = 15 V, ID = 10 nA
ZeroGate Voltage Drain CurrentIDSS4080mAVDS = 15 V, VGS = 0, Note 5
DrainSource On ResistancerDS(on)8.0VDS 0.1 V, VGS = 0, MMBFJ108
DrainSource On ResistancerDS(on)12VDS 0.1 V, VGS = 0, J109
SMALL SIGNAL CHARACTERISTICS
DrainGate & SourceGate On CapacitanceCdg(on), Csg(on)85pFVDS = 0, VGS = 0, f = 1.0 MHz
DrainGate Off CapacitanceCdg(off)15pFVDS = 0, VGS = 10 V, f = 1.0 MHz
SourceGate Off CapacitanceCsg(off)15pFVDS = 0, VGS = 10 V, f = 1.0 MHz

2409301133_onsemi-J109-D26Z_C900941.pdf

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onsemi J109 D26Z Low On Resistance N Channel JFET for Digital Switching Applications Pb Free Device

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Product Detail
Ciss-Input Capacitance :
-
Operating Temperature :
-55℃~+150℃@(Tj)
Pd - Power Dissipation :
625mW
Drain Current (Idss) :
40mA@15V
FET Type :
-
RDS(on) :
12Ω
Contact Supplier
onsemi J109 D26Z Low On Resistance N Channel JFET for Digital Switching Applications Pb Free Device

Hefei Purple Horn E-Commerce Co., Ltd.

Verified Supplier
1 Years
anhui, hefei
Since 2009
Business Type :
Manufacturer, Distributor/Wholesaler, Agent, Importer
Main Products :
Bipolar Transistor Arrays, Bridge Rectifiers, JFETs
Employee Number :
300~500
Certification Level :
Verified Supplier
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