10N60 600V n channel mosfet field effect transistors for switched mode power supplies
Datasheet:CY-10N60F.pdf
Field effect transistor features:
Absolute Maximum Ratings (Tc=25°C)
| Symbol | Parameters | FQPF10N60C | Unit |
| VDSS |
Drain-Source Voltage |
600 | V |
| VGS |
Gate-Source Voltage-Continuous |
±30 | V |
| ID |
Drain Current-Continuous |
9.5* | A |
| IDM |
Drain Current-Single Plused |
38* | A |
| PD |
Power Dissipation |
50 | W |
| Tj |
Max.Operating junction temperature |
-55~150 | ℃ |
Electrical characteristics (Tc=25°C unless otherwise noted)
| Symbol | Parameters | Min | Typ | Max | Units | Conditions | ||
| Static Characteristics | ||||||||
| BVDSS |
Drain-Source Breakdown |
600 | -- | -- | V | VGS =0 V, ID =250 µA | ||
| VGS(th) |
Gate Threshold Voltage |
2.0 | -- | 4.0 | V | VDS=VGS,ID=250μA | ||
| RDS(on) |
Drain-Source On-Resistance |
-- | 0.6 | 0.73 | Ω |
VGS=10V,ID=4.75A |
||
| IGSS |
Gate-Body Leakage Current |
-- | -- | ±100 | nA | VGS=±30V,VDS=0 | ||
| IDSS |
Zero Gate Voltage Drain Current |
-- | -- | 1 | μA | VDS=600V,VGS=0 | ||
| gfs |
Forward Transconductance |
-- | 8.0 | -- | S | VDS=40V,ID=4.75A (Note 4) | ||
| Switching Characteristics | ||||||||
| Td(on) |
Turn-On Delay Time |
-- | 23 | 55 | ns |
VDS=300V,ID=9.5A, |
||
| Tr |
Rise Time |
-- | 69 | 150 | ns | |||
| Td(off) |
Turn-Off Delay Time |
-- | 144 | 300 | ns | |||
| Tf |
Fall Time |
-- | 77 | 165 | ns | |||
| Qg |
Total Gate Charge |
-- | 44 | 57 | nC |
VDS=480V,VGS=10V, |
||
| Qgs |
Gate-Source Charge |
-- | 6.7 | -- | nC | |||
| Qgd |
Gate-Drain Charge |
-- |
18.5 |
-- | nC | |||
| Dynamic Characteristics | ||||||||
| Ciss |
Input Capacitance |
-- | 1570 | 2040 | pF |
VDS=25V,VGS=0, |
||
| Coss |
Output Capacitance |
-- | 166 | 215 | pF | |||
| Crss |
Reverse Transfer Capacitance |
-- | 18 | 24 | pF | |||
| IS |
Continuous Drain-Source Diode |
-- | -- | 9.5 | A | |||
| VSD |
Diode Forward On-Voltage |
-- | -- | 1.4 | V | IS=9.5A,VGS=0V | ||
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