MachineU > China Products > Lights & Lighting > Lighting Accessories > Ballasts
Organic N Channel Field Effect Transistor For Electronic Lamp Ballast
Organic N Channel Field Effect Transistor For Electronic Lamp Ballast
Organic N Channel Field Effect Transistor For Electronic Lamp Ballast
Organic N Channel Field Effect Transistor For Electronic Lamp Ballast
Specifications
Brand Name :
JC
Model Number :
OSP55N06-
Certification :
RoHS
Place of Origin :
Jiangxi, China
MOQ :
Negotiable
Price :
Negotiated
Payment Terms :
Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability :
15,000,000PCS Per Day
Delivery Time :
1 - 2 Weeks
Packaging Details :
Boxed
Name :
N Channel Field Effect Transistor
Drain-Source Voltage :
60V
Gate-Source Voltage-Continuous :
±20V
Drain Current-Continuous（Note 2） :
55A
Drain Current-Single Plused（Note 1） :
200A
Power Dissipation （Note 2) :
130W
Description

Organic N Channel Field Effect Transistor For Electronic Lamp Ballast

N Channel Field Effect Transistor Features

  1. High input impedance and low level drive
  2. Avalanche energy tested
  3. Improved dv/dt capability,high ruggedness

Absolute Maximum Ratings (Tc=25°C)

SymbolParametersRatingsUnit
VDSS

Drain-Source Voltage

60V
VGS

Gate-Source Voltage-Continuous

±20V
ID

Drain Current-Continuous(Note 2)

55A
IDM

Drain Current-Single Plused(Note 1)

200A
PD

Power Dissipation (Note 2)

130W
Tj

Max.Operating junction temperature

150℃


Electrical characteristics (Tc=25°C unless otherwise noted)

SymbolParametersMinTypMaxUnitsConditions
Static Characteristics
BVDSS

Drain-Source Breakdown
VoltageCurrent (Note 1)

60----VID=250µA,VGS=0V,TJ=25°C
VGS(th)

Gate Threshold Voltage

2.0--4.0VVDS=VGS,ID=250μA
RDS(on)

Drain-Source On-Resistance

--1822mΩVGS=10V,ID=25A
IGSS

Gate-Body Leakage Current

----±100nAVGS=±20V,VDS=0
IDSS

Zero Gate Voltage Drain Current

----1μAVDS=60V,VGS=0
gfs

Forward Transconductance

15----SVDS=30V,ID=25A
Switching Characteristics
Td(on)

Turn-On Delay Time

--60--ns

VDS=30V,ID=25A,
RG=50Ω(Note 2)

Tr

Rise Time

--185--ns
Td(off)

Turn-Off Delay Time

--75--ns
Tf

Fall Time

--60--ns
Qg

Total Gate Charge

--39--nC

VDS=48V,VGS=10V,
ID=50A(Note 2)

Qgs

Gate-Source Charge

--9.3--nC
Qgd

Gate-Drain Charge

--13--nC
Dynamic Characteristics
Ciss

Input Capacitance

--880--pF

VDS=25V,VGS=0,
f=1MHz

Coss

Output Capacitance

--430--pF
Crss

Reverse Transfer Capacitance

--110--pF
IS

Continuous Drain-Source Diode
Forward Current(Note 2)

----55A
VSD

Diode Forward On-Voltage

----1.4VIS=20A,VGS=0
Rth(j-c)

Thermal Resistance, Junction to Case

----1.15℃/W


Our Company

Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.






Send your message to this supplier
Send Now

Organic N Channel Field Effect Transistor For Electronic Lamp Ballast

Ask Latest Price
Product Detail
Brand Name :
JC
Model Number :
OSP55N06-
Certification :
RoHS
Place of Origin :
Jiangxi, China
MOQ :
Negotiable
Price :
Negotiated
Contact Supplier
Organic N Channel Field Effect Transistor For Electronic Lamp Ballast
Organic N Channel Field Effect Transistor For Electronic Lamp Ballast

Shenzhen Canyi Technology Co., Ltd.

Active Member
8 Years
guangdong, shenzhen
Since 2000
Business Type :
Distributor/Wholesaler, Agent
Main Products :
Schottky Signal Diode, Schottky Barrier Diode, High Current Rectifier Diode
Total Annual :
500000-1000000
Employee Number :
100~120
Certification Level :
Active Member
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Field Effect Transistor
MachineU China Products Lights & Lighting Lighting Accessories Ballasts
Contact Supplier
Submit Requirement