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Low Gate Charge N Channel Field Effect Transistor With Low Level Drive
Low Gate Charge N Channel Field Effect Transistor With Low Level Drive
Specifications
Brand Name :
JC
Model Number :
OSPF13N50
Certification :
RoHS
Place of Origin :
Jiangxi, China
MOQ :
Negotiable
Price :
Negotiated
Payment Terms :
Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability :
15,000,000PCS Per Day
Delivery Time :
1 - 2 Weeks
Packaging Details :
Boxed
Name :
N Channel Field Effect Transistor
Drain-Source Voltage :
500V
Gate-Source Voltage-Continuous :
±30V
Drain Current-Continuous（Note 2） :
13A
Drain Current-Single Plused（Note 1） :
52A
Power Dissipation （Note 2) :
48W
Description

Low Gate Charge N Channel Field Effect Transistor With Low Level Drive

N Channel Field Effect Transistor Features

  1. High input impedance and low level drive
  2. Avalanche energy tested
  3. Improved dv/dt capability,high ruggedness

N Channel Field Effect Transistor Application

  1. High power DC/DC converters and switch mode power supplies
  2. DC motor control
  3. Automotive applications
  4. Uninterruptible power supply

Absolute Maximum Ratings (Tc=25°C)

Symbol Parameters Ratings Unit
VDSS

Drain-Source Voltage

 500 V
VGS

Gate-Source Voltage-Continuous

 ±30 V
ID

Drain Current-Continuous(Note 2)

 13 A
IDM

Drain Current-Single Plused(Note 1)

 52 A
PD

Power Dissipation (Note 2)

 48 W
Tj

Max.Operating junction temperature

 150 ℃


Electrical characteristics (Tc=25°C unless otherwise noted)

Symbol Parameters Min Typ Max Units Conditions
Static Characteristics
BVDSS

Drain-Source Breakdown
VoltageCurrent (Note 1)

 500 -- -- V ID=250µA,VGS=0V,TJ=25°C
VGS(th)

Gate Threshold Voltage

 2.0 -- 4.0 V VDS=VGS,ID=250μA
RDS(on)

Drain-Source On-Resistance

 -- 0.35 0.4 Ω VGS=10V,ID=6.5A
IGSS

Gate-Body Leakage Current

 -- -- ±100 nA VGS=±30V,VDS=0
IDSS

Zero Gate Voltage Drain Current

 -- -- 1 μA VDS=500V,VGS=0
Switching Characteristics
Td(on)

Turn-On Delay Time

 -- 25 60 ns

VDS=250V,ID=13A,
RG=25Ω(Note 2)
Tr

Rise Time

 -- 100 210 ns
Td(off)

Turn-Off Delay Time

 -- 130 270 ns
Tf

Fall Time

 --

100

 210 ns
Qg

Total Gate Charge

 -- 43 56 nC

VDS=400,VGS=10V,
ID=13A(Note 2)
Qgs

Gate-Source Charge

 -- 7.5 -- nC
Qgd

Gate-Drain Charge

 -- 18.5 -- nC
Dynamic Characteristics
Ciss

Input Capacitance

 -- 1580 2055 pF

VDS=25V,VGS=0,
f=1MHz
Coss

Output Capacitance

 -- 180 235 pF
Crss

Reverse Transfer Capacitance

 -- 20 25 pF
IS

Continuous Drain-Source Diode
Forward Current(Note 2)

 -- -- 13 A
VSD

Diode Forward On-Voltage

 -- -- 1.4 V IS=13A,VGS=0
Rth(j-c)

Thermal Resistance, Junction to
Case

 -- -- 2.58 ℃/W

Our Service

1. Efficient Servicer: Professional and Efficient services, Feedback in 24 hours. Full range products for choice.

2. Factory Choice: We are professional supplier. OEM / ODM are Available. We also supply search service for you if you need . We have professional purchasing department to supply the latest goods and best seller products.

3. QC Service: Great Quality Check, We know how to do good check quality. We have 19 years experience professional QC team.

4. Logistic Service: We would like to assist our customer to make QC + collect goods from other supplier.

5. Long-Term Service: We are looking for long-term business PARTNER! So we supply excellent service and can design as your request.







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Low Gate Charge N Channel Field Effect Transistor With Low Level Drive

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Product Detail
Brand Name :
JC
Model Number :
OSPF13N50
Certification :
RoHS
Place of Origin :
Jiangxi, China
MOQ :
Negotiable
Price :
Negotiated
Contact Supplier
Low Gate Charge N Channel Field Effect Transistor With Low Level Drive

Shenzhen Canyi Technology Co., Ltd.

Active Member
8 Years
guangdong, shenzhen
Since 2000
Business Type :
Distributor/Wholesaler, Agent
Main Products :
Schottky Signal Diode, Schottky Barrier Diode, High Current Rectifier Diode
Total Annual :
500000-1000000
Employee Number :
100~120
Certification Level :
Active Member
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