MachineU > China Products > Electrical Equipment & Supplies > Switches > Inductive Switch
Dual N - Channel Field Effect Transistor MXN3312 High Density Cell Design For Power Switching
Dual N - Channel Field Effect Transistor MXN3312 High Density Cell Design For Power Switching
Specifications
Brand Name :
DEC
Model Number :
MXN3312
MOQ :
1000PCS
Price :
Negotiated
Supply Ability :
15,000,000PCS Per Day
Packaging Details :
Boxed
Type :
N-Channel
Package Type :
Surface Mount
VDS :
30V
IDS :
12A
Standard :
RoSH
Application :
Power switching
Place of Origin :
Jiangxi, China
Certification :
RoHS
Delivery Time :
1 - 2 Weeks
Payment Terms :
Telegraphic Transfer in Advance (Advance TT, T/T)
Description

MXN3312 Field Effect Transistor Dual N - Channel Enhancement Mode Power Mosfet

Product Description

The MXN3312 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

High density cell design fo ultra low Rdson
Fully characterized Avalanche voltage and current

Application


Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply

Bulk packaging data

0.54*45 Diodes Bulk Box: 63*21*191MM Outer Box: 42*33*24CM

0.58 Diodes Bulk Box: 84*22*195MM Outer Box: 42*33*24CM

0.54*45 Diodes Tape cassette: 255*145*75MM Outer box: 42*27.6*31CM

45 long bulk packaging: 42*33*24CM

58 long bulk packaging: 45*21*26CM

FAQ

Q: When can I get the price?

A: We will reply you ASAP. We will quote for you within 12 hours after we get your inquiry.

Q: How many kinds of products in your factory ?

A: We have a large range of products, such as Schottky Signal Diode, Schottky Barrier Diode, High Current Rectifier Diode, Fast Recovery Diode, Fast Switching Diode, Surface Mount Zener Diode and etc. Looking forward to your email.

Q:Can you customize it DIY?

A: We can help you design exclusive products according to your requirements. We have the entire service flow from product R&D design, manufacturing process to finished product packaging, welcome to sample custom.

Q: How long can I expect to get the sample?

A: It will be ready for delivery in 1 - 2 weeks, depends on the feature of your sample. The samples will be sent to you by express.

Send your message to this supplier
Send Now

Dual N - Channel Field Effect Transistor MXN3312 High Density Cell Design For Power Switching

Ask Latest Price
Product Detail
Brand Name :
DEC
Model Number :
MXN3312
MOQ :
1000PCS
Price :
Negotiated
Supply Ability :
15,000,000PCS Per Day
Packaging Details :
Boxed
Contact Supplier
Dual N - Channel Field Effect Transistor MXN3312 High Density Cell Design For Power Switching

Shenzhen Canyi Technology Co., Ltd.

Active Member
8 Years
guangdong, shenzhen
Since 2000
Business Type :
Distributor/Wholesaler, Agent
Main Products :
Schottky Signal Diode, Schottky Barrier Diode, High Current Rectifier Diode
Total Annual :
500000-1000000
Employee Number :
100~120
Certification Level :
Active Member
Discover similar products
View More

Find Similar Products By Category:

Supplier Homepage Products Field Effect Transistor
MachineU China Products Electrical Equipment & Supplies Switches Inductive Switch
Contact Supplier
Submit Requirement