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SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode
SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode
SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode
SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode
SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode
SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode
SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode
SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode
Specifications
Brand Name :
CANYI
Model Number :
SI2301
Certification :
RoHS
Place of Origin :
Guangdong, China
MOQ :
1000PCS
Price :
Negotiated
Payment Terms :
Telegraphic Transfer in Advance (Advance TT, T/T)
Supply Ability :
15,000,000PCS Per Day
Delivery Time :
3-5 days
Packaging Details :
Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms
Type :
Silicon Transistor
Package Type :
Surface Mount
Package :
SOT-23
VDS :
-20V
TJ, Tstg :
-55 to 150℃
Sample :
Free
Port :
Shenzhen
Description

SI2301 MOSFETs FETs SOT-23 MOS power field effect transistor 2.5A 20V A1SHB P-channel Enhancement Mode

Features:

  • Advanced trench process technology
  • High Density Cell Design For Ultra Low On-Resistance

Maximum Ratings and Thermal Characteristics (TA = 25℃unless otherwise noted)
ParameterSymbolLimitUnit
Drain-Source VoltageVDS-20V
Gate-Source VoltageVGS±8
Continuous Drain CurrentID-2.2A


Pulsed Drain Current 1)

IDM-8
Maximum Power Dissipation 2)TA=25℃PD1.25W
TA=75℃0.8
Operating Junction and Storage Temperature RangeTJ, Tstg-55 to 150℃
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)RthJA100
Junction-to-Ambient Thermal Resistance (PCB mounted) 3)166℃/W


Notes
1)Pulse width limited by maximum junction temperature.

2)Surface Mounted on FR4 Board, t ≤5 sec.

3)Surface Mounted on FR4 Board.

ELECTRICAL CHARACTERISTICS

ParameterSymbolTest ConditionMin.Typ.Max.Unit
Static
Drain-Source Breakdown VoltageBVDSS VGS = 0V, ID = -250uA-20 V
Drain-Source On-State Resistance1)RDS(on)VGS = -4.5V, ID = -2.8A 105130mΩ
VGS = -2.5V, ID = -2.0A 145190
Gate Threshold VoltageVGS(th)VDS = VGS ID = -250uA-0.45 v
Zero Gate Voltage Drain CurrentIDSSVDS = -20V, VGS = -0V -1uA
VDS = -20V, VGS = -0V TJ=55℃ -10
Gate Body LeakageIGSSVGS=±8v,VDS= 0V ±100nA
Forward Transconductance 1)gfsVDS= -5V,ID= -2.8A 6.5-S
Dynamic
Total Gate ChargeQg

VDS = -6V, ID ≌ -2.8A
VGS = -4.5V

 5.810nC
Gate-Source ChargeQgs 0.85
Gate-Drain ChargeQgd 1.7
Turn-On Delay Timetd(on)

VDD = -6V, RL=6Ω ID≌-1.A, VGEN = -4.5V
RG = 6Ω

 1325ns
Turn-On Rise Timetr 3660
Turn-Off Delay Timetd(off) 4270
Turn-Off Fall Timetf 3460
Input CapacitanceCiss


VDS = -6V, VGS = 0V
f = 1.0 MHz

 415 pF
Output CapacitanceCoss 223
Reverse Transfer CapacitanceCrss 87
Source-Drain Diode
Max. Diode Forward CurrentISIS = -1.6A, VGS = 0V -1.6A
Diode Forward VoltageVSD -0.8-1.2

V

1)Pulse test: pulse width ≤300us, duty cycle≤2%


Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.
Our service:
1. Efficient Servicer: Professional and Efficient services, Feedback in 24 hours. Full range products for choice.

2. Factory Choice: We are professional supplier. OEM / ODM are Available. We also supply search service for you if you need . We have professional purchasing department to supply the latest goods and best seller products.

3. QC Service: Great Quality Check, We know how to do good check quality. We have 19 years experience professional QC team.

4. Logistic Service: We would like to assist our customer to make QC + collect goods from other supplier.

5. Long-Term Service: We are looking for long-term business PARTNER! So we supply excellent service and can design as your request.

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SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode

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Product Detail
Brand Name :
CANYI
Model Number :
SI2301
Certification :
RoHS
Place of Origin :
Guangdong, China
MOQ :
1000PCS
Price :
Negotiated
Contact Supplier
SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode
SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode
SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode
SI2301 MOSFETs FETs SOT-23 MOS High Power Transistor 2.5A 20V A1SHB P Channel Enhancement Mode

Shenzhen Canyi Technology Co., Ltd.

Active Member
8 Years
guangdong, shenzhen
Since 2000
Business Type :
Distributor/Wholesaler, Agent
Main Products :
Schottky Signal Diode, Schottky Barrier Diode, High Current Rectifier Diode
Total Annual :
500000-1000000
Employee Number :
100~120
Certification Level :
Active Member
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