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Icp Etching Wafer Holder Silicon Carbide Sic Plate In Led Industry
Icp Etching Wafer Holder Silicon Carbide Sic Plate In Led Industry
Icp Etching Wafer Holder Silicon Carbide Sic Plate In Led Industry
Icp Etching Wafer Holder Silicon Carbide Sic Plate In Led Industry
Icp Etching Wafer Holder Silicon Carbide Sic Plate In Led Industry
Icp Etching Wafer Holder Silicon Carbide Sic Plate In Led Industry
Specifications
Brand Name :
KeGu
Place of Origin :
China
Payment Terms :
L/C,D/A,D/P,T/T,Western Union,MoneyGram
Supply Ability :
2,000 pcs/month
Packaging Details :
Strong wooden box for Global shipping
Model Number :
Customizable
Price :
200-500 yuan/kg
Material :
SiC
Composition:SiC :
>98%
Color :
Black
Density :
>3.05g/cm3
Max. Service Temp :
1650°C
Flexural Strength :
380MPa
Description

Silicon Carbide (sic) Trays Or Plate, As A Wafer Holder For Icp Etching Process In Led Industry

Description:

Silicon Carbide (SiC) Trays or plate used as a wafer holder for ICP etching process in LED industry.

Silicon carbide (SiC) is a has excellent thermal conductivity, corrosion resistance, and with low thermal expansion. Silicon carbide is an excellent material for sealing rings and bearings. Silicon carbide trays have excellent corrosion resistance, great wear resistance, great mechanical strength under high temperatures. We supply many sizes of silicon carbide trays as well as other SiC products.

Silicon Carbide Trays Properties:

Compound Formula SiC
Molecular Weight 40.1
Appearance Black
Melting Point 2,730° C (4,946° F) (decomposes)
Density 3.0 to 3.2 g/cm3
Electrical Resistivity 1 to 4 10x Ω-m
Poisson’s Ratio 0.15 to 0.21
Specific Heat 670 to 1180 J/kg-K


Silicon Carbide Tray Specifications:

Type Recrystallized SiC Sintered SiC Reaction Bonded SiC
Purity of Silicon Carbide 99.5% 98% >88%
Max. Working Temp. (`C) 1650 1550 1300
Bulk Density (g/cm3) 2.7 3.1 >3
Appearance Porosity <15% 2.5 0.1
Flexural strength (MPa) 110 400 380
Compressive strength (MPa) >300 2200 2100
Thermal expansion (10^-6/`C) 4.6 (1200`C) 4.0 (<500`C) 4.4 (<500`C)
Thermal conductivity (W/m.K) 35~36 110 65
Main characteristics High temp. High resistance.
High purity		 Fracture Toughness Chemical Resistance


Feature requirement:

  1. Excellent thermal conductivity
  2. Resistant to plasma shock
  3. Good temperature uniformity


Applications:
-Silicon carbide can be applied in areas such as semiconductor and coating.
-Our silicon carbide trays are widely used in LED industry.

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Icp Etching Wafer Holder Silicon Carbide Sic Plate In Led Industry

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Product Detail
Brand Name :
KeGu
Place of Origin :
China
Payment Terms :
L/C,D/A,D/P,T/T,Western Union,MoneyGram
Supply Ability :
2,000 pcs/month
Packaging Details :
Strong wooden box for Global shipping
Model Number :
Customizable
Contact Supplier
Icp Etching Wafer Holder Silicon Carbide Sic Plate In Led Industry
Icp Etching Wafer Holder Silicon Carbide Sic Plate In Led Industry
Icp Etching Wafer Holder Silicon Carbide Sic Plate In Led Industry

Shaanxi KeGu New Material Technology Co., Ltd

Verified Supplier
1 Years
Shaanxi, chaoyang
Since 2017
Business Type :
Manufacturer
Main Products :
Silicon Carbide Ceramic, Reaction Bonded Silicon Carbide, Heating Elements
Total Annual :
800-850
Employee Number :
60~70
Certification Level :
Verified Supplier
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