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BFR93AE6327HTSA1
BFR93AE6327HTSA1
Specifications
Voltage - Collector Emitter Breakdown (Max) : :
12V
Product Category : :
RF Bipolar Transistors
Gain : :
9.5dB ~ 14.5dB
Transistor Type : :
NPN
Minimum Quantity : :
3000
Supplier Device Package : :
SOT-23-3
Noise Figure (dB Typ @ f) : :
1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Part Status : :
Active
Current - Collector (Ic) (Max) : :
90mA
Power - Max : :
300mW
Packaging : :
Tape & Reel (TR)
Frequency - Transition : :
6GHz
DC Current Gain (hFE) (Min) @ Ic, Vce : :
70 @ 30mA, 8V
Operating Temperature : :
150°C (TJ)
Package / Case : :
TO-236-3, SC-59, SOT-23-3
Mounting Type : :
Surface Mount
Series : :
-
Manufacturer : :
Infineon Technologies
Description :
TRANSISTOR RF NPN 12V SOT-23
Description
The BFR93AE6327HTSA1,from Infineon Technologies,is RF Bipolar Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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BFR93AE6327HTSA1

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Product Detail
Voltage - Collector Emitter Breakdown (Max) : :
12V
Product Category : :
RF Bipolar Transistors
Gain : :
9.5dB ~ 14.5dB
Transistor Type : :
NPN
Minimum Quantity : :
3000
Supplier Device Package : :
SOT-23-3
Contact Supplier
BFR93AE6327HTSA1

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Verified Supplier
3 Years
shenzhen
Since 2014
Business Type :
Agent
Main Products :
Application Specific Clock/Timing, RF Bipolar Transistors, TVS Diodes / ESD Suppressors
Total Annual :
6000000-1200000
Employee Number :
100~200
Certification Level :
Verified Supplier
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