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BFP650H6327XTSA1
BFP650H6327XTSA1
Specifications
Voltage - Collector Emitter Breakdown (Max) : :
4.5V
Product Category : :
RF Bipolar Transistors
Gain : :
10.5dB ~ 21.5dB
Transistor Type : :
NPN
Minimum Quantity : :
3000
Supplier Device Package : :
PG-SOT343-4
Noise Figure (dB Typ @ f) : :
0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Part Status : :
Active
Current - Collector (Ic) (Max) : :
150mA
Power - Max : :
500mW
Packaging : :
Tape & Reel (TR)
Frequency - Transition : :
37GHz
DC Current Gain (hFE) (Min) @ Ic, Vce : :
110 @ 80mA, 3V
Operating Temperature : :
150°C (TJ)
Package / Case : :
SC-82A, SOT-343
Mounting Type : :
Surface Mount
Series : :
-
Manufacturer : :
Infineon Technologies
Description :
TRANS RF NPN 4V 150MA SOT343
Description
The BFP650H6327XTSA1,from Infineon Technologies,is RF Bipolar Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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BFP650H6327XTSA1

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Product Detail
Voltage - Collector Emitter Breakdown (Max) : :
4.5V
Product Category : :
RF Bipolar Transistors
Gain : :
10.5dB ~ 21.5dB
Transistor Type : :
NPN
Minimum Quantity : :
3000
Supplier Device Package : :
PG-SOT343-4
Contact Supplier
BFP650H6327XTSA1

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Verified Supplier
3 Years
shenzhen
Since 2014
Business Type :
Agent
Main Products :
Application Specific Clock/Timing, RF Bipolar Transistors, TVS Diodes / ESD Suppressors
Total Annual :
6000000-1200000
Employee Number :
100~200
Certification Level :
Verified Supplier
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