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MT3S113TU,LF
MT3S113TU,LF
Specifications
Voltage - Collector Emitter Breakdown (Max) : :
5.3V
Product Category : :
RF Bipolar Transistors
Gain : :
12.5dB
Transistor Type : :
NPN
Minimum Quantity : :
3000
Supplier Device Package : :
UFM
Noise Figure (dB Typ @ f) : :
1.45dB @ 1GHz
Part Status : :
Active
Current - Collector (Ic) (Max) : :
100mA
Power - Max : :
900mW
Packaging : :
Tape & Reel (TR)
Frequency - Transition : :
11.2GHz
DC Current Gain (hFE) (Min) @ Ic, Vce : :
200 @ 30mA, 5V
Operating Temperature : :
150°C (TJ)
Package / Case : :
3-SMD, Flat Leads
Mounting Type : :
Surface Mount
Series : :
-
Manufacturer : :
Toshiba Semiconductor
Description :
RF SIGE HETEROJUNCTION BIPOLAR N
Description
The MT3S113TU,LF,from Toshiba Semiconductor,is RF Bipolar Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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MT3S113TU,LF

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Product Detail
Voltage - Collector Emitter Breakdown (Max) : :
5.3V
Product Category : :
RF Bipolar Transistors
Gain : :
12.5dB
Transistor Type : :
NPN
Minimum Quantity : :
3000
Supplier Device Package : :
UFM
Contact Supplier
MT3S113TU,LF

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Verified Supplier
3 Years
shenzhen
Since 2014
Business Type :
Agent
Main Products :
Application Specific Clock/Timing, RF Bipolar Transistors, TVS Diodes / ESD Suppressors
Total Annual :
6000000-1200000
Employee Number :
100~200
Certification Level :
Verified Supplier
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