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IXGH48N60A3D1
IXGH48N60A3D1
IXGH48N60A3D1
IXGH48N60A3D1
IXGH48N60A3D1
IXGH48N60A3D1
Specifications
Gate-Emitter Leakage Current : :
100 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Pd - Power Dissipation : :
300 W
Collector- Emitter Voltage VCEO Max : :
600 V
Package / Case : :
TO-247AD-3
Maximum Operating Temperature : :
+ 150 C
Packaging : :
Tube
Maximum Gate Emitter Voltage : :
+/- 20 V
Collector-Emitter Saturation Voltage : :
1.18 V
Manufacturer : :
IXYS
Description :
IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 48A
Description
The IXGH48N60A3D1,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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IXGH48N60A3D1

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Product Detail
Gate-Emitter Leakage Current : :
100 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Pd - Power Dissipation : :
300 W
Collector- Emitter Voltage VCEO Max : :
600 V
Package / Case : :
TO-247AD-3
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IXGH48N60A3D1
IXGH48N60A3D1
IXGH48N60A3D1

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Verified Supplier
3 Years
shenzhen
Since 2014
Business Type :
Agent
Main Products :
Application Specific Clock/Timing, RF Bipolar Transistors, TVS Diodes / ESD Suppressors
Total Annual :
6000000-1200000
Employee Number :
100~200
Certification Level :
Verified Supplier
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