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IRG7PH30K10PBF
IRG7PH30K10PBF
Specifications
Gate-Emitter Leakage Current : :
100 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
33 A
Pd - Power Dissipation : :
210 W
Collector- Emitter Voltage VCEO Max : :
1.2 kV
Package / Case : :
TO-247-3
Maximum Operating Temperature : :
+ 175 C
Maximum Gate Emitter Voltage : :
+/- 30 V
Packaging : :
Tube
Configuration : :
Single
Collector-Emitter Saturation Voltage : :
2.05 V
Manufacturer : :
IR / Infineon
Description :
IGBT Transistors Trnch IGBT 1200V 10A single IGBT
Description
The IRG7PH30K10PBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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IRG7PH30K10PBF

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Product Detail
Gate-Emitter Leakage Current : :
100 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
33 A
Pd - Power Dissipation : :
210 W
Collector- Emitter Voltage VCEO Max : :
1.2 kV
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IRG7PH30K10PBF

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Verified Supplier
3 Years
shenzhen
Since 2014
Business Type :
Agent
Main Products :
Application Specific Clock/Timing, RF Bipolar Transistors, TVS Diodes / ESD Suppressors
Total Annual :
6000000-1200000
Employee Number :
100~200
Certification Level :
Verified Supplier
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