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HGTG20N60A4D
HGTG20N60A4D
HGTG20N60A4D
HGTG20N60A4D
HGTG20N60A4D
HGTG20N60A4D
Specifications
Gate-Emitter Leakage Current : :
+/- 250 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
70 A
Pd - Power Dissipation : :
290 W
Collector- Emitter Voltage VCEO Max : :
600 V
Package / Case : :
TO-247-3
Maximum Operating Temperature : :
+ 150 C
Maximum Gate Emitter Voltage : :
+/- 20 V
Packaging : :
Tube
Configuration : :
Single
Collector-Emitter Saturation Voltage : :
1.8 V
Manufacturer : :
Fairchild Semiconductor
Description :
IGBT Transistors 600V
Description
The HGTG20N60A4D,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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HGTG20N60A4D

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Product Detail
Gate-Emitter Leakage Current : :
+/- 250 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
70 A
Pd - Power Dissipation : :
290 W
Collector- Emitter Voltage VCEO Max : :
600 V
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HGTG20N60A4D
HGTG20N60A4D
HGTG20N60A4D

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Verified Supplier
3 Years
shenzhen
Since 2014
Business Type :
Agent
Main Products :
Application Specific Clock/Timing, RF Bipolar Transistors, TVS Diodes / ESD Suppressors
Total Annual :
6000000-1200000
Employee Number :
100~200
Certification Level :
Verified Supplier
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