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DMN61D8LVT-13
DMN61D8LVT-13
Specifications
Transistor Polarity : :
N-Channel
Technology : :
Si
Id - Continuous Drain Current : :
630 mA, 630 mA
Mounting Style : :
SMD/SMT
Minimum Operating Temperature : :
- 55 C
Package / Case : :
TSOT-26-6
Maximum Operating Temperature : :
+ 150 C
Channel Mode : :
Enhancement
Vds - Drain-Source Breakdown Voltage : :
60 V, 60 V
Packaging : :
Reel
Vgs th - Gate-Source Threshold Voltage : :
1.3 V, 1.3 V
Product Category : :
MOSFET
Rds On - Drain-Source Resistance : :
1.1 Ohms, 1.1 Ohms
Number of Channels : :
2 Channel
Vgs - Gate-Source Voltage : :
12 V, 12 V
Qg - Gate Charge : :
740 pC, 740 pC
Manufacturer : :
Diodes Incorporated
Description :
MOSFET 60V Switching Diode 1.8Ohm at 5Vgs 470mA
Description
The DMN61D8LVT-13,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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DMN61D8LVT-13

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Product Detail
Transistor Polarity : :
N-Channel
Technology : :
Si
Id - Continuous Drain Current : :
630 mA, 630 mA
Mounting Style : :
SMD/SMT
Minimum Operating Temperature : :
- 55 C
Package / Case : :
TSOT-26-6
Contact Supplier
DMN61D8LVT-13

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Verified Supplier
3 Years
shenzhen
Since 2014
Business Type :
Agent
Main Products :
Application Specific Clock/Timing, RF Bipolar Transistors, TVS Diodes / ESD Suppressors
Total Annual :
6000000-1200000
Employee Number :
100~200
Certification Level :
Verified Supplier
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