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IRFSL4010PBF
IRFSL4010PBF
Specifications
Transistor Polarity : :
N-Channel
Technology : :
Si
Product Category : :
MOSFET
Mounting Style : :
Through Hole
Package / Case : :
TO-262-3
Vds - Drain-Source Breakdown Voltage : :
100 V
Packaging : :
Tube
Id - Continuous Drain Current : :
180 A
Rds On - Drain-Source Resistance : :
3.9 mOhms
Number of Channels : :
1 Channel
Vgs - Gate-Source Voltage : :
20 V
Qg - Gate Charge : :
143 nC
Manufacturer : :
Infineon Technologies
Description :
MOSFET MOSFT 100V 180A 4.7mOhm 143nC
Description
The IRFSL4010PBF,from Infineon Technologies,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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IRFSL4010PBF

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Product Detail
Transistor Polarity : :
N-Channel
Technology : :
Si
Product Category : :
MOSFET
Mounting Style : :
Through Hole
Package / Case : :
TO-262-3
Vds - Drain-Source Breakdown Voltage : :
100 V
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IRFSL4010PBF

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Verified Supplier
3 Years
shenzhen
Since 2014
Business Type :
Agent
Main Products :
Application Specific Clock/Timing, RF Bipolar Transistors, TVS Diodes / ESD Suppressors
Total Annual :
6000000-1200000
Employee Number :
100~200
Certification Level :
Verified Supplier
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