Specifications
Transistor Polarity : :
N-Channel
Technology : :
Si
Id - Continuous Drain Current : :
900 mA
Mounting Style : :
SMD/SMT
Minimum Operating Temperature : :
- 55 C
Package / Case : :
U-DFN1212-3
Maximum Operating Temperature : :
+ 150 C
Channel Mode : :
Enhancement
Vds - Drain-Source Breakdown Voltage : :
20 V
Packaging : :
Reel
Vgs th - Gate-Source Threshold Voltage : :
450 mV
Product Category : :
MOSFET
Rds On - Drain-Source Resistance : :
350 mOhms
Number of Channels : :
1 Channel
Vgs - Gate-Source Voltage : :
12 V
Qg - Gate Charge : :
500 pC
Manufacturer : :
Diodes Incorporated
Description :
MOSFET 20V N-Ch Enh FET VL Gate 1.0V
Description
The DMN2400UFDQ-7,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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DMN2400UFDQ-7

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Transistor Polarity : :
N-Channel
Technology : :
Si
Id - Continuous Drain Current : :
900 mA
Mounting Style : :
SMD/SMT
Minimum Operating Temperature : :
- 55 C
Package / Case : :
U-DFN1212-3
Contact Supplier
DMN2400UFDQ-7

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Verified Supplier
3 Years
shenzhen
Since 2014
Business Type :
Agent
Total Annual :
6000000-1200000
Employee Number :
100~200
Certification Level :
Verified Supplier
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