100W is a high-performance wideband GaN RF power amplifier module developed for RF signal amplification, anti-drone countermeasure systems and industrial wireless equipment. Built with gallium nitride semiconductor technology, this 100W RF amplifier delivers stable continuous-wave output, high power efficiency and outstanding thermal stability, which makes it a core component for portable and fixed C-UAS solutions.




Environmental & Interface Specifications
| Parameter | Description |
| Operating ambient temperature | -25 ~ +55 ℃ |
| Operating temperature | Over-temperature protection: Auto shutdown at +85 ℃, auto recovery when temperature drops to 65 ℃ |
| Relative humidity | 5% ~ 95% , non-condensing |
| Storage temperature | -40 to +85 ℃ |
| Built in signal | Built in signal source |
| RF Output | Type-N Connector |
Outline Dimensions
