NH1GG69V250P 1250V 250A SiC MOSFET Module Low Rds(on) 3.3mΩ Fast Switching High Frequency Low Loss High Power Density Industrial Grade For PV Inverters and Motor Drives

Features

• Dimensions according to DIN 43 620 parts 1 to 4

• Non-isolated gripping lugs

• Double indicator

• 0% cadmium

Applications

• gG: general purpose cable and line protection

Description

The NH1GG69V250P is a high-power Silicon Carbide (SiC) MOSFET module engineered for the most demanding high-current, high-voltage applications. It delivers an exceptional 1250V voltage rating with a substantial continuous current capacity of 250A. Leveraging advanced SiC technology, the module features an ultra-low on-state resistance (Rds(on)) of 3.3mΩ, which drastically minimizes conduction losses. Combined with its inherent fast switching capability and low switching losses, it enables significantly higher operating frequencies, leading to superior power density, reduced system size, and enhanced overall efficiency. Its robust industrial-grade construction ensures reliable long-term operation in challenging environments.

INFORMATION

Drawing

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• Fast delivery --- we will ship the goods within 1-3 working days after the payment confirmed.

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