Gate-Emitter Leakage Current : :
+/- 250 nA
Product Category : :
IGBT Transistors
Mounting Style : :
Through Hole
Continuous Collector Current at 25 C : :
80 A
Pd - Power Dissipation : :
283 W
Collector- Emitter Voltage VCEO Max : :
650 V
Package / Case : :
TO-3P-3
Maximum Operating Temperature : :
+ 175 C
Maximum Gate Emitter Voltage : :
+/- 30 V
Collector-Emitter Saturation Voltage : :
1.6 V
Manufacturer : :
STMicroelectronics
Description :
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 40 A high speed